1984
DOI: 10.1109/t-ed.1984.21689
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Multi-element reachthrough avalanche photodiodes

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Cited by 38 publications
(17 citation statements)
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“…The reach-through type of APD (Figure 4) is the most appropriate structure for measuring particles Figure 4. A typical internal structure of reach-through type of APD [e.g., Webb and Jones, 1974;Webb and McIntyre, 1984;Refaat et al, 2000;Moszyński et al, 2002]. The most remarkable property of the reach-through device is that the avalanche region is separated from an absorption region.…”
Section: Avalanche Photodiodesmentioning
confidence: 99%
See 1 more Smart Citation
“…The reach-through type of APD (Figure 4) is the most appropriate structure for measuring particles Figure 4. A typical internal structure of reach-through type of APD [e.g., Webb and Jones, 1974;Webb and McIntyre, 1984;Refaat et al, 2000;Moszyński et al, 2002]. The most remarkable property of the reach-through device is that the avalanche region is separated from an absorption region.…”
Section: Avalanche Photodiodesmentioning
confidence: 99%
“…A typical internal structure of reach‐through type of APD [e.g., Webb and Jones , ; Webb and McIntyre , ; Refaat et al , ; Moszyński et al , ]. The most remarkable property of the reach‐through device is that the avalanche region is separated from an absorption region.…”
Section: Avalanche Photodiodesmentioning
confidence: 99%
“…The spl 3989 has a depletion layer of 30 ȝm. Electrons of the carrier pairs generated by an injected electron experience first a region of low electric field, and drift to a narrow region of high electric field where avalanche multiplication occurs [Webb et al, 1974;Webb et al, 1984;Refaat et al, 2000]. The reach-through device needs relatively low voltage (several hundreds of volts) for full depletion due to the narrow avalanche region.…”
Section: Structurementioning
confidence: 99%
“…In the absorption region, the p þ layer at an active surface is followed by the a wide depletion layer (traditionally it ranges 10-100 mm), which increases the electron absorption depth. Electrons of the carrier pairs generated by an injected electron experience first a region of low electric field, and drift to a narrow region of high electric field where the avalanche multiplication occurs [11][12][13]. The reach-through device needs relatively low voltage (several hundreds of volts) for full depletion due to the narrow avalanche region.…”
Section: Structurementioning
confidence: 99%