Multi-component AlCrTaTiZrMo-nitride film with high diffusion resistance in copper metallization

Li, Rongbin; Qiao, Bangwei; Shang, Hui; Zhang, Jing; Jiang, Chunxia; Zhang, Weiwei

doi:10.1016/j.jallcom.2018.03.084

Cited by 30 publications

(14 citation statements)

References 16 publications

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“…From the high-resolution lattice image of the HEA/HEAN 0.7 stacked structures in Figure 6b, it was shown that the barrier layers exhibited an amorphous structure, with a small amount of nanocrystals unevenly distributed. This trend was due to the high-entropy effect of multiprincipal elements reducing the free energy of the system, [26,29] which inhibited the crystallization of the film during the deposition process.…”

Section: Resultsmentioning

confidence: 99%

“…This formula indicates that the value of D determines the atomicdiffusion behavior. [26] The atomic diffusion of HEAs depends on the vacancymediated diffusion mechanism. The diffusion coefficient of each element describes the diffusion speed of the atoms.…”

Section: Diffusion Coefficient In Heasmentioning

confidence: 99%

“…HEAs have a higher diffusion-activation energy than pure alloys and traditional barrier layers, including TaN, TiN, and so forth; thus, they have lower diffusion rates. [26,34] Moreover, due to the slow diffusion of the element itself, the phase-transition process of the new phase is delayed, resulting in the easy formation of a simple solid-solution phase or even an amorphous structure. Therefore, HEAs exhibit excellent thermal stability and diffusion barrier properties.…”

Section: Diffusion Coefficient In Heasmentioning

confidence: 99%

“…In addition to the good wettability of the HEA layer, the filling effect of N atoms, and the long diffusion distance of the layered structures of nitrides in the HEAN 0.7 layer, the following are important factors that affect the double-layer Table 2. Crystal structures and lattice spacings of individual metal elements in the AlCrTaTiZrRu alloy and (AlCrTaTiZrRu)N 0.7 nitride (JCPDS card, [26,29,30] FCC: face-centred-cubic; BCC: body-centred-cubic; HCP: hexagonal-close-packed.…”

Section: Diffusion Coefficient In Heasmentioning

confidence: 99%

“…However, after high‐temperature annealing, the adhesion of the film is reduced, and some voids appear locally. [ 26 ] In this article, based on the AlCrTaTiZrMoNx film studied by predecessors, a direct current (DC) magnetron‐sputtering technology exhibiting the advantages of a high sputtering rate, good adhesion performance, and mature technology is used to add an AlCrTaTiZrRu (thickness ≈3 nm) metal layer on top of (AlCrTaTiZrRu) N 0.7 (thickness ≈12 nm) to reduce the average resistance of the barrier layers and increase the adhesion of Cu to the substrate materials. The resistivity of Ru is low, and it has low solubility and good wettability with Cu.…”

Section: Introductionmentioning

confidence: 99%

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Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N_0.7 Film in Cu Interconnects

Chen

Jiang

et al. 2020

Adv Eng Mater

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Herein, a multi-component AlCrTaTiZrRu/(AlCrTaTiZrRu)N 0.7 double-layer structure is prepared by direct current (DC) magnetron sputtering as a diffusion barrier for Cu interconnection. To verify the diffusion-barrier properties at high temperatures, the Cu/AlCrTaTiZrRu/(AlCrTaTiZrRu)N 0.7 /Si structures are annealed at 700-900 C for 30 min in high vacuum. The barrier layer remains amorphous with few nanocrystalline structures after annealing at 800 C. Cu particle agglomeration begins to appear on the surface, but no Cu-silicide compound is found on the Si substrate, indicating that the layer can effectively defer the interdiffusion of Cu and Si. Under annealing at high temperature of 900 C, Cu silicides and other intermetallic compounds are formed on the surface of the Cu film, with the film resistivity increasing significantly, indicating that the AlCrTaTiZrRu/(AlCrTaTiZrRu)N 0.7 double-layer structures have completely failed.

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Section: Resultsmentioning

confidence: 99%

Section: Diffusion Coefficient In Heasmentioning

confidence: 99%

Section: Diffusion Coefficient In Heasmentioning

confidence: 99%

Section: Diffusion Coefficient In Heasmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N_0.7 Film in Cu Interconnects

Chen

Jiang

et al. 2020

Adv Eng Mater

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A Review on High Entropy Alloys Coatings: Fabrication Processes and Property Assessment

et al. 2019

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Surface coatings can enhance the mechanical and functional properties of substrates and keep good balance between specific mechanical properties and sufficient surface performance of the components. Coatings composed of high entropy alloys (HEAs) and HEA‐based materials, including metallic, ceramics, and composites have attracted the global attention and developed rapidly over the last decade, owing to their outstanding properties. Here, the authors provide a critical review of the state‐of‐the‐art for HEA‐based coatings, aiming to address the related conceptions, designing principles, microstructural, and mechanical evolutions during fabrication and post‐treatments process. The surface properties which are not limited to anti‐corrosion, anti‐radiation, and anti‐diffusion and their underlying mechanisms are analyzed. The development tendency and future applications are classified and discussed, including the basic researches about HEAs, the regulations of fabrication techniques and the exploring of functional properties of HEA‐based coatings. Due to their superior mechanical and functional potentials as well as abundant element‐constitutions of designing, surface coatings composed of HEA‐based materials are considered to have promising applications in engineering and industrial manufacturing.

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Enhanced Interfacial Adhesion and Thermal Stability in Bismuth Telluride/Nickel/Copper Multilayer Films with Low Electrical Contact Resistance

Zhu

Cao

Zhu

et al. 2018

Adv Materials Inter

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The interfacial property between thermoelectric films and metal electrodes greatly affects the performance and practical application of thin‐film thermoelectric devices. Here, Ni intermediate layer is chosen and inserted into Bi2Te3/Cu to simultaneously regulate the electrical and mechanical performance of the interface. Meanwhile, Ar/H2 plasma cleaning is also adopted to optimize the interfacial connection during the sputtering process. Results show the interfacial element diffusion can be effectively blocked after the introduction of Ni interlayer, and the Bi2Te3/Ni/Cu multilayer thin film performs an excellent interfacial adhesion and maintains a low specific contact resistivity about 2.7 × 10−6 Ω cm2, which can be attributed to the matching of thermal expansion coefficient between Bi2Te3, Ni, and Cu, and the reduction of lattice mismatch. Furthermore, the Ni interlayer can also alleviate the degradation of interfacial mechanical and electrical properties after 1000 cycles of thermal shock, consequently enhancing the reliability and stability of the interfacial connection. This work provides an effective way to improve the comprehensive performance of multilayer interface in thin‐film thermoelectric devices.

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Multi-component AlCrTaTiZrMo-nitride film with high diffusion resistance in copper metallization

Cited by 30 publications

References 16 publications

Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N_0.7 Film in Cu Interconnects

Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N_0.7 Film in Cu Interconnects

A Review on High Entropy Alloys Coatings: Fabrication Processes and Property Assessment

Enhanced Interfacial Adhesion and Thermal Stability in Bismuth Telluride/Nickel/Copper Multilayer Films with Low Electrical Contact Resistance

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Multi-component AlCrTaTiZrMo-nitride film with high diffusion resistance in copper metallization

Cited by 30 publications

References 16 publications

Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7 Film in Cu Interconnects

Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7 Film in Cu Interconnects

A Review on High Entropy Alloys Coatings: Fabrication Processes and Property Assessment

Enhanced Interfacial Adhesion and Thermal Stability in Bismuth Telluride/Nickel/Copper Multilayer Films with Low Electrical Contact Resistance

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Product

Resources

About

Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N_0.7 Film in Cu Interconnects

Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N_0.7 Film in Cu Interconnects