Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE

Abstract

InGaN nanostructures are among the most promising candidates for visible solid-state lighting and renewable energy sources. To date, there is still a lack of information about the influence of the growth conditions on the physical properties of these nanostructures. Here, we extend the study of InGaN nanowires growth directly on Si substrates by plasma-assisted molecular beam epitaxy. The results of the study showed that under appropriate growth conditions a change in the growth temperature of just 10 °C leads to a significant change in the structural and optical properties of the nanowires. InGaN nanowires with the areas containing 4%–10% of In with increasing tendency towards the top are formed at the growth temperature of 665 °C, while at the growth temperatures range of 655 °C–660 °C the spontaneously core–shell NWs are typically presented. In the latter case, the In contents in the core and the shell are about an order of magnitude different (e.g. 35% and 4% for 655 °C, respectively). The photoluminescence study of the NWs demonstrates a shift in the spectra from blue to orange in accordance with an increase of In content. Based on these results, a novel approach to the monolithic growth of In x Ga1−x N NWs with multi-colour light emission on Si substrates by setting a temperature gradient over the substrate surface is proposed.

Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory

“…Overall, the growth experiments were conducted within a rectangular range in the temperature–Ga BEP plane from 820 to 850 °C, for the temperature, and from 1 10 −7 Torr to 5 10 − 7 Torr, for the Ga BEP. Several growth experiments were carried out using a specially designed substrate holder, which provided a high temperature gradient across the substrate surface [ 28 ]. For this holder, our measurements using an OPTRIS Compact CT Laser 3MH1 pyrometer gave a temperature difference of 25 °C between the center and the edge of the one-quarter 2-inch substrate for a temperature of 840 °C at the center.…”

Особенности зарождения и роста нитевидных нанокристаллов InGaN на подложках SiC/Si методом хлорид-гидридной эпитаксии

“…Прежде всего это связано со сложностью получения низкодефектных пленок InGaN. Для решения данной проблемы авторы ряда работ [1][2][3] предлагают при создании гетероструктур вместо эпитаксиальных сплошных слоев, содержащих индий, использовать нитевидные нанокристаллы (ННК), поскольку в самих нанокристаллах практически не образуются дислокации несоответствия [4]. Отметим, что основная часть работ посвящена росту методами молекулярно-пучковой эпитаксии или газофазной эпитаксии из металлоорганических соединений.…”

Photoluminescence Redistribution of InGaN Nanowires Induced by Plasmonic Silver Nanoparticles

“…Free lateral surfaces of NWs, a small footprint between NWs and an underlying substrate provide efficient strain relaxation on the NW sidewalls without forming structural defects. It was shown [ 5 , 6 ] that this process contributes to growing InGaN NWs over the entire compositional range, which allows one to fabricate monolithic RGB micro LEDs on a single substrate [ 5 , 7 , 8 , 9 ]. As a result, InGaN NWs can be grown on lattice-mismatched substrates, in particular on Si [ 7 , 10 , 11 ].…”

“…It was shown [ 5 , 6 ] that this process contributes to growing InGaN NWs over the entire compositional range, which allows one to fabricate monolithic RGB micro LEDs on a single substrate [ 5 , 7 , 8 , 9 ]. As a result, InGaN NWs can be grown on lattice-mismatched substrates, in particular on Si [ 7 , 10 , 11 ].…”