Multi-chip Parallel IGBT Power Module Failure Monitoring Based on Gate Dynamic Characteristics

Wang, Chenyuan; He, Yigang; Wang, Chuankun; Li, Lie; Li, Jiyuan; Wu, Xiaoxin

doi:10.1109/acpee48638.2020.9136508

Cited by 4 publications

(3 citation statements)

References 13 publications

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“…Variations in the magnetic field resulting from sudden current transients during turn-on and turn-off moments can also serve as monitoring parameters, including alterations in the magnetic induction strength [52] and spectral characteristics [53]. The gate charging charge [54] and the gate charging time [55] have been explored as signals for detecting the wire bonding status in multi-chip parallel modules. When all wire bonds within a parallel branch are disconnected, there is a change in the input capacitance of the parallel chip.…”

Section: Sic Device Power Cycling Test's Monitoring Methodsmentioning

confidence: 99%

Review on Power Cycling Reliability of SiC Power Device

Gao,

Jia,

Wang

et al. 2024

Electronic Materials

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The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for assessing the packaging reliability of power devices. In this work, low-thermal-resistance packaging design structures of SiC devices are introduced, encompassing planar packaging with dual heat dissipation, press-pack packaging, three-dimensional (3D) packaging, and hybrid packaging. PCT methods and their control strategies are summarized and discussed. Direct-current PCT is the focus of this review. The failure mechanisms of SiC devices under PCT are pointed out. The electrical and temperature-sensitive parameters adopted to monitor the aging of SiC devices are organized. The existing international standards for PCT are evaluated. Due to the lack of authoritative statements for SiC devices, it is difficult to achieve comparison research results without consistent preconditions. Furthermore, the lifetimes of the various packaging designs of the tested SiC devices under PCTs are statistically analyzed. Additionally, problems related to parameter monitoring and test equipment are also summarized. This review explores the broader landscape by delving into the current challenges and main trends in PCTs for SiC devices.

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Section: Sic Device Power Cycling Test's Monitoring Methodsmentioning

confidence: 99%

Review on Power Cycling Reliability of SiC Power Device

Gao,

Jia,

Wang

et al. 2024

Electronic Materials

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“…IGBT module failure modes are mainly categorized into chip-level failure and packagelevel failure [29]. The main failure causes, and modes are shown in Figure 3.…”

Section: Igbt Module Failure Mechanismsmentioning

confidence: 99%

“…Studies have shown that, in experiments conducted to accelerate the aging of IGBT power modules, the saturation voltage drop V ce(sat) gradually increases with the failure process. In engineering studies, it is usually considered that an IGBT module fails when the saturation voltage drop value rises above 5% of the normal value [61,62].…”

Section: Igbt Module Condition Monitoring Health Indicatorsmentioning

confidence: 99%

Research Progress in Failure Mechanism and Health State Evaluation Index System of Welded IGBT Power Modules

et al. 2023

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As the performance requirements of insulated gate bipolar transistors (IGBTs) in various fields of power electronic systems are increasing, the IGBT power module package structure, aging mechanism analysis, and selection of health state characteristic parameters are of great significance to ensure the normal operation of power systems. At present, research on the aging failure of welded IGBT modules is relatively comprehensive and can be divided into chip aging failure and package aging failure according to their failure parts. However, there is some research on the relationship between aging failure and the characteristic quantity of power modules, but no definite system has been formed. Therefore, in this paper, the packaging structure of the solder-type IGBT modules and the aging mechanism caused by different aging reasons were summarized. Moreover, the health status monitoring of solder-type IGBT modules from the junction temperature, bonding line, solder layer, and package insulation aging health status monitoring and its quantitative assessment research progress was analyzed in detail. Also, the health state evaluation index system of the solder-type IGBT modules was completed on the basis of voltage, current, thermal, insulation parameters, and other characteristic quantities. Finally, based on the analysis of domestic and international research problems, the development trend and direction of the condition monitoring technology of solder-type IGBT modules is foreseen. The research on condition monitoring for welded IGBT module technology has a certain significance.

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Redundant Actuators without Direct Communication for Reactor Control Rod Positioning

Devine

Opila

2021

2021 IEEE Electric Ship Technologies Symposium (ESTS)

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Multi-chip Parallel IGBT Power Module Failure Monitoring Based on Gate Dynamic Characteristics

Cited by 4 publications

References 13 publications

Review on Power Cycling Reliability of SiC Power Device

Review on Power Cycling Reliability of SiC Power Device

Research Progress in Failure Mechanism and Health State Evaluation Index System of Welded IGBT Power Modules

Redundant Actuators without Direct Communication for Reactor Control Rod Positioning

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