Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Erine, Catherine; Ma, Jun; Santoruvo, Giovanni; Matioli, Elison

doi:10.1109/led.2020.2967458

Cited by 18 publications

(12 citation statements)

References 24 publications

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“…While multi-channel devices have first been proposed for RF applications [132]- [135], there has been a growing interest in their use in power electronics applications. However, power devices present very specific requirements such as normally-off operation, large blocking voltage capabilities and good stability during switching operation, which need to be separately addressed and solved.…”

Section: Multi-channel Devicesmentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

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291

126

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Over the last decade, gallium nitride has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available on the market, GaN has the widest energy gap, the largest critical field, the highest saturation velocity, thus representing an excellent material for the fabrication of high speed/high voltage components.The presence of spontaneous and piezoelectric polarization allows to create a 2-dimensional electron gas, with high mobility and large channel density, in absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable high frequency operation, with consequent advantages in terms of miniaturization.For high power/high voltage operation, vertical device architectures are being proposed and investigated, and 3-dimensional structuresfin-shaped, trench-structured, nanowire-basedare demonstrating a great potential. Contrary to silicon, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This tutorial paper describes the physics, technology and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail, to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN, and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight on the most relevant aspects gives the reader a comprehensive overview on present and next-generation GaN electronics. IntroductionOver the past decade, gallium nitride has emerged as an excellent material for the fabrication of power semiconductor devices. Thanks to the unique properties of GaN, diodes and transistors based on this material have excellent performance, compared to their silicon counterparts, and are expected to find wide application in the next-generation power converters. Owing to the flexibility and the energy efficiency of GaN-based power converters, the interest towards this technology is rapidly growing: the aim of this tutorial is to review the most relevant physical properties, the operating principles, the fabrication parameters, and the stability/reliability issues of GaN-based power transistors. For introductory purposes, we start summarizing the physical reasons why GaN transistors achieve a much better performance than the corresponding silicon devices, to help the reader understanding the unique advantages of this technology.The properties of GaN devices allow the fabrication of high-efficiency (near or above 99 %)...

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Section: Multi-channel Devicesmentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

Self Cite

291

126

View full text Add to dashboard Cite

show abstract

“…The above-mentioned heterojunction was based on a single channel structure. Recently, multi-channel heterostructureswhere several AlGaN/GaN layers can be stacked to achieve multiple 2DEGs-have been proposed to induce more carriers, avoiding problems induced by high-Al-content barrier materials and the parasitics introduced at the interconnections [185]. By doping the AlGaN barrier layer, the electrical properties of the heterojunction linearly increase when doping in the second or additional barrier layers, and greatly improve the current driving ability of the device [186].…”

Section: (In)al(ga)n/gan Heterojunctionmentioning

confidence: 99%

“…By doping the AlGaN barrier layer, the electrical properties of the heterojunction linearly increase when doping in the second or additional barrier layers, and greatly improve the current driving ability of the device [186]. Erine et al [185] fabricated and simulated a series of multi-channel wafers with different multi-channel structures, as demonstrated by the n s and R sh , as shown in figures 7(b) and (c). Furthermore, the fivechannel structure obtained a low R sh of 103 Ω sq −1 , a total n s of 4.03 × 10 13 cm −2 , and a µ N of 1650 cm 2 V −1 s −1 by Halleffect measurements.…”

Section: (In)al(ga)n/gan Heterojunctionmentioning

confidence: 99%

“…Based on multiple channels heterostructures with a higher n s , the conventional top-gate structure can be quite challenging, resulting in a more negative V TH to achieve the normally-OFF operation and low transconductance values [268]. Consequently, the multi-channel tri-gate GaN-based HEMT was achieved by combining the multichannel heterostructure and a tri-gate architecture, allowing excellent control over multiple parallel 2DEG channels and taking advantage of the high conductivity of multiple 2DEG channels [185,186]. Ma et al [269] successfully fabricated a multi-channel tri-gate AlGaN/GaN MOS HEMT with a V TH of −3.6 V, g m,max of 156.6 mS mm −1 , and a higher on/off ratio over 10 10 .…”

Section: Technologies For Normally-off Operationmentioning

confidence: 99%

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GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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“…However, it is technically difficult to grow an AlGaN layer with high Al content to achieve high μ n and n ch simultaneously. Recently, to simultaneously obtain both the enhanced μ n and n ch , multiple-channel structures were explored [ 4 , 5 , 6 , 7 ]. Furthermore, superior performances of higher current drive, low resistance, low-frequency noise, and improved linearity were demonstrated in multiple-channel MOSHEMTs [ 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Lee

Chyi

et al. 2021

Materials

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In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 1013 cm−2 and an electron mobility of 1770 cm2/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (gmmax) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a gmmax of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10−5 and 6.25 × 10−6 were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.

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Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Cited by 18 publications

References 24 publications

GaN-based power devices: Physics, reliability, and perspectives

GaN-based power devices: Physics, reliability, and perspectives

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

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