Abstract:In electronics memories are the widely used elements. As the transistor size shrinks multiple-bit upset (MCUs) are increasing due to radiation effects in memories. This affects the reliability of memories. Interleaving and built-in current sensors (BICS) have been success in the case of single event upset (SEC). The process is taken one step further by proposing specific error correction codes to protect memories against multiple-bit upsets and to improve yield have been proposed. The method is evaluated using… Show more
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