Metrology, Inspection, and Process Control for Microlithography XXXIV 2020
DOI: 10.1117/12.2553556
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Multi-beam Inspection (MBI) development progress and applications

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Cited by 6 publications
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“…The wide variety of investigations reported in this work were possible thanks to the dedication of many contributors from different companies. In particular, wish to thank: Some of the material in this paper has been published in the proceedings of SPIE Advanced Lithography [5][6][7][8][9][10][11][12]. .…”
Section: Acknowledgementmentioning
confidence: 99%
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“…The wide variety of investigations reported in this work were possible thanks to the dedication of many contributors from different companies. In particular, wish to thank: Some of the material in this paper has been published in the proceedings of SPIE Advanced Lithography [5][6][7][8][9][10][11][12]. .…”
Section: Acknowledgementmentioning
confidence: 99%
“…In Chapter 2 we will discuss the following application use cases, related to the clustering discussed in Fig. Each of these items have been recently reported in detail [5][6][7][8][9][10][11][12] and are the results of join imec collaborations with various equipment vendors on critical issues in advanced ICM. Each one of these investigations uses advanced settings either in terms of Data Acquisition or Data Processing, or both.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, a higher coherence [4,5], a higher brightness [4,6] and narrower energy distribution can be realized [4,5,7]. The high possible switching rate up to the THz/GHz range enables high frequency applications like traveling wave tubes [2], THz sources [8], pulsed X-Ray communication [9] as well as sequential multibeam devices for lithography [10], wafer inspection [11] or multibeam computertomography [12]. To reach even smaller time scales down to the attosecond range a short laser pulse controlled emission process can be used [13].…”
Section: Introductionmentioning
confidence: 99%
“…Ultrafast and ultrashort pulsed electron beams have been widely used in characterization of materials and devices, and many breakthroughs have been highly recognized. Recent trends have seen signi cant achievements in ultrahigh spatio-temporal resolution electron analytical studies [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] , including ultrafast imaging of low-energy electron diffraction 1,[3][4][5] , ultrafast transmission and scanning electron microscopies 2,[6][7][8][9][10][11][12][13] , and high-throughput analysis with a nanoscale resolution for 300 mm silicon wafer 14,15 . These breakthroughs cannot be achieved without the signi cant advances in electron beam science and technology.…”
Section: Introductionmentioning
confidence: 99%