Multi-band simulation of resonant tunneling diodes with scattering effects

Ogawa, Masahiro; Sugano, T.; Tominaga, Ryuichiro; Miyoshi, Tomomitsu

doi:10.1016/s0921-4526(99)00263-x

Cited by 9 publications

(9 citation statements)

References 7 publications

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“…They become relevant in some transport studies [57]. Some approaches to the theoretical study of tunneling via these minima can be found in [58][59][60]. which characterize the miniband structure.…”

Section: Minibandsmentioning

confidence: 99%

Semiconductor superlattices: a model system for nonlinear transport

2002

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Electric transport in semiconductor superlattices is dominated by pronounced negative differential conductivity. In this report the standard transport theories for superlattices, i.e. miniband conduction, Wannier-Stark-hopping, and sequential tunneling, are reviewed in detail. Their relation to each other is clarified by a comparison with a quantum transport model based on nonequilibrium Green functions. It is demonstrated how the occurrence of negative differential conductivity causes inhomogeneous electric field distributions, yielding either a characteristic sawtooth shape of the current-voltage characteristic or self-sustained current oscillations. An additional ac-voltage in the THz range is included in the theory as well. The results display absolute negative conductance, photon-assisted tunneling, the possibility of gain, and a negative tunneling capacitance. 2 Notation and list of symbolsThroughout this work we consider a superlattice, which is grown in the z direction. Vectors within the (x, y) plane parallel to the interfaces are denoted by bold face letters k, r, while vectors in 3 dimensional space are r, k, . . . . All sums and integrals extend from −∞ to ∞ if not stated otherwise.The following relations are frequently used in this work and are given here for easy reference:

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Section: Minibandsmentioning

confidence: 99%

Semiconductor superlattices: a model system for nonlinear transport

2002

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“…The whole problem of the coupling to the reservoirs is now reduced to the calculation of the contact GF g R , which in principle is of infinite dimension, but only needs to be known in the close vicinity of the device boundary, owing to the reduced dimensionality of the coupling matrix τ , and can therefore be calculated by surface GF methods using decimation techniques [78,79], conformal maps [80] or complex band methods [81,82,83,53].…”

Section: Contactsmentioning

confidence: 99%

“…Apart from the application to actual non-equilibrium quantum transport phenomena comprising ballistic transport and resonant tunneling in semiconductor multilayers and nanostructures of different dimensionality (quantum wells [16], wires [17,18] and dots [19]), metallic and molecular conduction [20,21,22,23,24,25,26], phonon mediated inelastic and thermal transport [27,28,29,30,31], Coulomb-blockade [32,33] and Kondo-effect [34,35], it is also used to describe strongly non-equilibrium and interacting regimes in semiconductor quantum optics requiring a quantum kinetic approach [36,37,38,39,40,41], with phenomena such as non-equilibrium absorption, interband polarization, spontaneous emission and laser gain. The concept was first adapted to the simulation of transport in open nanoscale devices on the example of tunneling in metal-insulator-metal junctions [42], and has in the following been applied to investigation and modelling of MOSFET [43,44,45,46,47], CNT-FET [48,49], resonant tunneling diodes [50,51,27,52,16,53] and interband tunneling diodes [54,…”

Section: Introductionmentioning

confidence: 99%

Theory and simulation of quantum photovoltaic devices based on the non-equilibrium Green’s function formalism

Aeberhard

2011

J Comput Electron

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This article reviews the application of the non-equilibrium Green's function formalism to the simulation of novel photovoltaic devices utilizing quantum confinement effects in low dimensional absorber structures. It covers well-known aspects of the fundamental NEGF theory for a system of interacting electrons, photons and phonons with relevance for the simulation of optoelectronic devices and introduces at the same time new approaches to the theoretical description of the elementary processes of photovoltaic device operation, such as photogeneration via coherent excitonic absorption, phonon-mediated indirect optical transitions or non-radiative recombination via defect states. While the description of the theoretical framework is kept as general as possible, two specific prototypical quantum photovoltaic devices, a single quantum well photodiode and a silicon-oxide based superlattice absorber, are used to illustrated the kind of unique insight that numerical simulations based on the theory are able to provide.

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“…[11][12][13] The lesser and greater self energies are then obtained from the broadening function Γ B 1 and the Fermi distribution f μL of the contact characterized by the chemical potential μ L ,…”

Section: Contactsmentioning

confidence: 99%

Microscopic theory and numerical simulation of quantum well solar cells

Aeberhard

2010

Physics and Simulation of Optoelectronic Devices XVIII

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Quantum well solar cells have been introduced as high efficiency photovoltaic energy conversion devices nearly twenty years ago. Since then, their capability to outperform bulk devices under concentrated illumination was established and efficiencies close to the single gap Shockley-Queisser limit for the corresponding bulk materials were reached. In order to further increase the efficiency, the mechanisms behind the extraordinary performance need to be analyzed and understood. To this end, novel theoretical approaches to the simulation of quantum optoelectronic devices are required, since the device behavior depends on complex processes between localized and extended states, such as carrier capture and escape into and from quantum wells, which cannot be consistently described by the combination of macroscopic semiconductor transport equations with detailed balance rate models conventionally used in photovoltaics. This paper presents a suitable theoretical framework based on the nonequilibrium Green's function formalism that allows the unification of quantum optics and dissipative quantum transport on the quantum kinetic level and is thus able to provide insight into the microscopic mechanisms of quantum photovoltaic device operation.

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Multi-band simulation of resonant tunneling diodes with scattering effects

Cited by 9 publications

References 7 publications

Semiconductor superlattices: a model system for nonlinear transport

Semiconductor superlattices: a model system for nonlinear transport

Theory and simulation of quantum photovoltaic devices based on the non-equilibrium Green’s function formalism

Microscopic theory and numerical simulation of quantum well solar cells

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