Multi-band simulation of quantum transport in resonant interband tunneling devices

Ogawa, Masahiro; Sugano, T.; Miyoshi, Tomomitsu

doi:10.1016/s1386-9477(00)00073-4

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…They showed that multi-band description, together with fullband numerical integration and Hartree screening, are the key points for a quantitative correct RTD description. Similar results have also been found for AlAs/GaAs RTDs [244,248] and for interband Si-based diodes [239]. In particular, Ogawa et al [252] have investigated the effect of scattering mechanisms in RTDs within ETB.…”

Section: Tunnelling Devicessupporting

confidence: 64%

“…Resonant tunnelling diodes (RTDs) have been extensively studied within ETB and a recent overview has been given by Ting [122]. Such investigations include RTDs made with AlGaAs/GaAs [72,73,[241][242][243][244], AlN/GaN [245] and InAs/GaSb/AlSb [82,141,[246][247][248]. In particular, the nanoelectronic modelling (NEMO) program [130,249], originally developed in the EFA, has been extended to describe nanostructures within ETB models [250].…”

Section: Tunnelling Devicesmentioning

confidence: 99%

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Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Carlo

2002

Semicond. Sci. Technol.

115

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Effects of hydrostatic pressure on the electron gparallel factor and g-factor anisotropy inGaAs-(Ga, Al)As quantum wells under magnetic fields N Porras-Montenegro, C A Duque, E Reyes-Gómez et al. Electron g-factor study in {\rm Ga}_{1-x}In_{x}{\rm As}_{y}{\rm Sb}_{1-y}\hbox{--}{\rm GaSb} and {\rm GaSb}\hbox{--}{\rm Ga}_{1-x}{\rm In}_{x}{\rm As}_{y}{\rm Sb}_{1-y}\hbox{--}{\rm GaSb} quaternary alloy semiconductor SQDSQDs (SQDs) R Sánchez-Cano and N Porras-Montenegro Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields F E López, E Reyes-Gómez, H S Brandi et al. Jumping magneto-electric states of electrons in semiconductor multiple quantum wells Pawel Pfeffer and Wlodek Zawadzki Magnetic field effect on electron spin dynamics in (110) GaAs quantum wells G Wang, A Balocchi, A V Poshakinskiy et al. AbstractThe electron effective g factor tensor in asymmetric III-V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the´k p 8 8 · Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors * g and *

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Section: Tunnelling Devicessupporting

confidence: 64%

Section: Tunnelling Devicesmentioning

confidence: 99%

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Carlo

2002

Semicond. Sci. Technol.

115

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“…Resonant tunnelling diodes (RTDs) have been extensively studied within ETB and a recent overview has been given by Ting (1999). Such investigations include RTDs made with AlGaAs/GaAs (Rousseau et al 1989a, b, Boykin et al 1991, Di Carlo and Lugli 1995, Ogawa et al 2000a, AlN/GaN (Sacconi et al 2002a), InAs/GaSb/AlSb (Ting et al 1991, 1992, Kiledjian et al 1992, Boykin 1995, Ogawa et al 2000b. In particular, the nanoelectronic modelling (NEMO) program (Lake et al 1997), originally developed in the EFA, has been extended to describe nanostructures within ETB models (Bowen et al 1997).…”

Section: Resonant Tunnelling Diodesmentioning

confidence: 99%

Atomistic theory of transport in organic and inorganic nanostructures

2004

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As the size of modern electronic and optoelectronic devices is scaling down at a steady pace, atomistic simulations become necessary for an accurate modelling of their structural, electronic, optical and transport properties. Such microscopic approaches are important in order to account correctly for quantum-mechanical phenomena affecting both electronic and transport properties of nanodevices. Effective bulk parameters cannot be used for the description of the electronic states since interfacial properties play a crucial role and semiclassical methods for transport calculations are not suitable at the typical scales where the device behaviour is characterized by coherent tunnelling.Quantum-mechanical computations with atomic resolution can be achieved using localized basis sets for the description of the system Hamiltonian. Such methods have been extensively used to predict optical and electronic properties of molecules and mesoscopic systems.The most important approaches formulated in terms of localized basis sets, from empirical tight-binding (TB) to first principles methods, are here reviewed. Being a full band approach, even the simplest TB overcomes the limitations of envelope function approximations, such as the well-known k • p, and allows to retain atomic details and realistic band structures. First principles calculations, on the other hand, can give a very accurate description of the electronic and structural properties.Transport in nanoscale devices cannot neglect quantum effects such as coherent tunnelling. In this context, localized basis sets are well-suited for the formal treatment of quantum transport since they provide a simple mathematical framework to treat open-boundary conditions, typically encountered when the system eigenstates carry a steady-state current.We review the principal methods used to formulate quantum transport based on local orbital sets via transfer matrix and Green's function (GF) techniques. We start from a general introduction to the scattering theory which leads to the Landauer formula, and then report on the most recent progresses of the field including the application of the self-consistent non-equilibrium GF formalism.

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“…1,2 Until now, the emphasis has been on the study of the current-voltage (I-V) characteristics, often in connection with the materials properties of the heterostructures or with the details of their band structure. [3][4][5][6][7][8] The wealth of information available on the InAs-AlSb-GaSb system under an external bias constrasts with the limited knowledge about the details of the tunneling mechanism when the system is in quasiequilibrium, that is, in the zero-voltage limit. Since carriers accumulate in quasitriangular wells at the interfaces, the fact that tunneling ideally occurs between quantized 2D states at the electrodes should be reflected in the conductance behavior.…”

mentioning

confidence: 99%

Magnetotunneling in a two-dimensional electron-hole system near equilibrium

2000

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We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaSb/AlSb/InAs heterostructures at low temperatures (1.7 KϽTϽ60 K) and under a magnetic field at various angles with the heterostructure's interfaces. Shubnikov-de Haas oscillations in the magnetoconductance reveal the twodimensional ͑2D͒ character of the electrons accumulated at the InAs interfaces and yield their number in each of them. The temperature dependence of the oscillations suggests the formation of a field-induced energy gap at the Fermi level, similar to that observed before in simpler 2D-2D tunneling systems. A calculation of the magnetoconductance that considers different 2D densities in the two InAs electrodes agrees with the main observations, but fails to explain features that might be related to the presence of 2D holes in the GaSb region.

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Multi-band simulation of quantum transport in resonant interband tunneling devices

Cited by 6 publications

References 12 publications

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Atomistic theory of transport in organic and inorganic nanostructures

Magnetotunneling in a two-dimensional electron-hole system near equilibrium

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