Multi-band simulation of interband tunneling devices reflecting realistic band structure

Ogawa, Masahiro; Tominaga, Ryuichiro; Miyoshi, Tomomitsu

doi:10.1109/sispad.2000.871208

Cited by 2 publications

(3 citation statements)

References 8 publications

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“…They showed that multi-band description, together with fullband numerical integration and Hartree screening, are the key points for a quantitative correct RTD description. Similar results have also been found for AlAs/GaAs RTDs [244,248] and for interband Si-based diodes [239]. In particular, Ogawa et al [252] have investigated the effect of scattering mechanisms in RTDs within ETB.…”

Section: Tunnelling Devicessupporting

confidence: 65%

“…One of the main success of ETB is the multi-band treatment of tunnelling devices, such as Zener diodes [131,233,239] and resonant tunnelling devices. Here, valley mixing, a correct description of the band dispersion of evanescent states (complex band structure), band nonparabolicity, etc, make the ETB treatment well suited for accurate analysis.…”

Section: Tunnelling Devicesmentioning

confidence: 99%

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Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Carlo

2002

Semicond. Sci. Technol.

115

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Effects of hydrostatic pressure on the electron gparallel factor and g-factor anisotropy inGaAs-(Ga, Al)As quantum wells under magnetic fields N Porras-Montenegro, C A Duque, E Reyes-Gómez et al. Electron g-factor study in {\rm Ga}_{1-x}In_{x}{\rm As}_{y}{\rm Sb}_{1-y}\hbox{--}{\rm GaSb} and {\rm GaSb}\hbox{--}{\rm Ga}_{1-x}{\rm In}_{x}{\rm As}_{y}{\rm Sb}_{1-y}\hbox{--}{\rm GaSb} quaternary alloy semiconductor SQDSQDs (SQDs) R Sánchez-Cano and N Porras-Montenegro Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields F E López, E Reyes-Gómez, H S Brandi et al. Jumping magneto-electric states of electrons in semiconductor multiple quantum wells Pawel Pfeffer and Wlodek Zawadzki Magnetic field effect on electron spin dynamics in (110) GaAs quantum wells G Wang, A Balocchi, A V Poshakinskiy et al. AbstractThe electron effective g factor tensor in asymmetric III-V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the´k p 8 8 · Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors * g and *

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Section: Tunnelling Devicessupporting

confidence: 65%

Section: Tunnelling Devicesmentioning

confidence: 99%

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Carlo

2002

Semicond. Sci. Technol.

115

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“…In this paper, the tunnel junction is simulated using a rigorous quantum transport approach based on the nonequilibrium Green's function (NEGF) formalism as used in the nano-electronics community for the simulation of interband tunneling transistors [6][7][8][9][10] . In combination with atomistic electronic structure theory and self-consistent coupling to a Poisson solver, the approach is able to provide a realistic picture of the relevant density of states and associated current flow under non-equilibrium conditions, by accurately reflecting the effects of internal fields, carrier confinement and elastic as well as inelastic scattering mechanisms.…”

mentioning

confidence: 99%

Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs/InGaAs bulk and quantum-well interband tunnel junctions for multijunction solar cells

Aeberhard

2013

Phys. Rev. B

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Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and double quantum well interband tunnel heterojunctions are simulated rigorously using the non-equilibrium Green's function formalism for coherent and dissipative quantum transport in combination with a simple two-band tight-binding model for the electronic structure. A realistic band profile and associated built-in electrostatic field is obtained via self-consistent coupling of the transport formalism to Poisson's equation. The model reproduces experimentally observed features in the current-voltage characteristics of the device, such as the structure appearing in the negative differential resistance regime due to quantization of emitter states. Local maps of density of states and current spectrum reveal the impact of quasi-bound states, electric fields and electron-phonon scattering on the interband tunneling current. In this way, resonances appearing in the current through the double quantum well structure in the negative differential resistance regime can be related to the alignment of subbands in the coupled quantum wells.

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Multi-band simulation of interband tunneling devices reflecting realistic band structure

Cited by 2 publications

References 8 publications

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs/InGaAs bulk and quantum-well interband tunnel junctions for multijunction solar cells

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