2008
DOI: 10.1080/14786430802566372
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Multi-asperity contact: A comparison between discrete dislocation and crystal plasticity predictions

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Cited by 24 publications
(20 citation statements)
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References 34 publications
(46 reference statements)
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“…The roughness of the surface is strongly simplified to a sinusoidal wave function, but plasticity caused by dislocation glide is carefully computed by discrete dislocation simulations [9]. The numerical technique has so far proven successful to capture size dependent plastic behavior of isolated flat contacts [10] as well as interplay between plasticity underneath arrays of flat contacts [11,12].…”
Section: Introductionmentioning
confidence: 99%
“…The roughness of the surface is strongly simplified to a sinusoidal wave function, but plasticity caused by dislocation glide is carefully computed by discrete dislocation simulations [9]. The numerical technique has so far proven successful to capture size dependent plastic behavior of isolated flat contacts [10] as well as interplay between plasticity underneath arrays of flat contacts [11,12].…”
Section: Introductionmentioning
confidence: 99%
“…As deformation proceeds, the dislocations emanating from sources near neighboring contacts interact and this contributes to the increased mean contact pressure. A more detailed study of the role of contact size and contact fraction a=w will be reported in Nicola et al (2006b). In the remainder of this paper, unless stated otherwise, the contact size is a ¼ 1 mm and w ¼ 9 mm.…”
Section: Effect Of Contact Size and Friction Without Surface Sourcesmentioning
confidence: 99%
“…When the template contacts are closely spaced (small w) a larger force is required to imprint the films. This is partly due to the different elastic stress states developing during loading, but mainly to a different plastic behavior: the plastic zones underneath closely spaced contacts interact with each other and give rise to a harder response (see also [14,15]). Figures 3(a)-(c) show the stress σ 22 and dislocation distribution in the unit cells for w = 2, 5 and 10 µm at the maximum imprinting depth (u = 0.05 µm).…”
Section: Imprinting Simulationsmentioning
confidence: 99%
“…Once the stresses have been determined, the incremental change in position of each dislocation is calculated, and conditions are checked for nucleation, annihilation of dipoles and pinning at or release from obstacles. Details on the numerical procedure for solving the governing field equations and constitutive equations are presented in [14].…”
Section: Boundary Conditionsmentioning
confidence: 99%