2012
DOI: 10.1016/j.mejo.2011.12.007
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Multi-aggressor capacitive and inductive coupling noise modeling and mitigation

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Cited by 3 publications
(1 citation statement)
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“…Power and ground noise is caused by high-frequency switching of the instantaneous current, which introduces large current spikes that IR and inductive (Ldi /dt) voltage drops, producing voltage fluctuations in the power and ground distribution networks [33], [43]- [46]. Interconnect noise [47]- [49] or crosstalk is the voltage change induced on a victim node due to capacitive or inductive coupling from a switching node. CMOS digital circuits are traditionally considered tolerant to noise due to the high-noise margins [42].…”
Section: A Signal Integrity Challenges In Deeply Scaled Cmosmentioning
confidence: 99%
“…Power and ground noise is caused by high-frequency switching of the instantaneous current, which introduces large current spikes that IR and inductive (Ldi /dt) voltage drops, producing voltage fluctuations in the power and ground distribution networks [33], [43]- [46]. Interconnect noise [47]- [49] or crosstalk is the voltage change induced on a victim node due to capacitive or inductive coupling from a switching node. CMOS digital circuits are traditionally considered tolerant to noise due to the high-noise margins [42].…”
Section: A Signal Integrity Challenges In Deeply Scaled Cmosmentioning
confidence: 99%