2015
DOI: 10.1109/tnano.2015.2397951
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MRAM PUF: A Novel Geometry Based Magnetic PUF With Integrated CMOS

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Cited by 79 publications
(30 citation statements)
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“…However, they are not necessarily the most recent. In [28][29][30], promising MRAM-based PUF results are reported. However, the reported results are based on simulation studies, which do not fully capture the physical reality.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…However, they are not necessarily the most recent. In [28][29][30], promising MRAM-based PUF results are reported. However, the reported results are based on simulation studies, which do not fully capture the physical reality.…”
Section: Discussionmentioning
confidence: 99%
“…In [10], the results are based on small-scale experiments on STT-MRAM while our results are based on larger-scale analyses. For using the MRAM-based PUFs in key generation protocols [28][29][30], it is necessary to employ some error reduction/correction methods for enhancing the PUF reliability. Our results show 49.8% of the inter-PUF between different TAS-MRAM-based PUF dies.…”
Section: Discussionmentioning
confidence: 99%
“…For example, the magnetoresistive random-access memory (MRAM) PUF, the dynamic random access memory (DRAM), PUF, and the memristive device based strong PUF (mrSPUF). MRAM PUF responses are generated using the unique energy-tilt, which is an outcome of the random geometric variations in the MRAM cells [14]. Their solution requires only minimal hardware and current drivers beyond conventional MRAM to supply the destabilizing current.…”
Section: Related Workmentioning
confidence: 99%
“…PUF, broadly categorized as “weak PUF” and “strong PUF”, is an emerging low-cost on-chip secure primitive [ 2 , 4 , 5 , 6 , 7 ]. By converting the inherent uncontrollable and unpredictable variations of the semiconductor manufacturing process to a random digital bit string, a PUF generates a “response” upon a “challenge”, namely a challenge-response pair (CRP).…”
Section: Introductionmentioning
confidence: 99%