MRAM Cell Technology for Over 500-MHz SoC

Sakimura, N.; Sugibayashi, Toshio; Honda, Takeshi; Honjo, Haruo; Saito, Shinobu; Suzuki, T.; Ishiwata, N.; Tahara, S.

doi:10.1109/jssc.2007.891665

Cited by 50 publications

(20 citation statements)

References 15 publications

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“…The unit cell consists of two transistors and one MTJ device, namely a 2T1MTJ structure. 50) A word line is connected to the gate of the transistors and two write bit lines are connected to the source=drain. The other source=drain is connected to the recording part of the MTJ device.…”

Section: Three-terminal Spintronics Devicesmentioning

confidence: 99%

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Fukami

Ohno

2017

Jpn. J. Appl. Phys.

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Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-ofconcept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

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Section: Three-terminal Spintronics Devicesmentioning

confidence: 99%

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Fukami

Ohno

2017

Jpn. J. Appl. Phys.

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“…It is useful because it can function at low voltages and has a lifetime of over 10 16 write cycles [2]. In addition, making STT-MRAM suitable for use in high-density products [3], [4], [5], [6], [7]. STT-MRAM uses magnetic tunnel junction (MTJ) device.…”

Section: Introductionmentioning

confidence: 99%

A Counter-based Read Circuit Tolerant to Process Variation for 0.4-V Operating STT-MRAM

Umeki

Yanagida

Yoshimoto

et al. 2016

IPSJ Transactions on System LSI Design Methodology

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Abstract:In this paper, in order to realize 0.4 V operation of STT-MRAM, we propose the counter base read circuit. The proposed read circuit has tolerance for process variation and temperature fluctuation by changing dynamically the load curve in a time-axis at the read operation. We confirmed that the proposed read circuit can operate at the conditions of five process corners (TT, FF, FS, SF, and SS) and three temperatures (−20• C, 25• C, and 100• C) by HSPICE simulations. At the condition of TT corner and 25• C, read time of the proposed circuit is 271 ns, and energy consumption is 1.05 pJ at "1" read operation and 1.23 pJ at "0" read operation.

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“…Parkin et al proposed the sequential access memory, which is so-called the magnetic race track memory, based on the currentdriven domain wall motion [8]. Other applications of current-driven domain wall motion to logic [9] and memory [10] devices have been also presented. These application requires to overcome the large drive current.…”

Section: Introductionmentioning

confidence: 99%

Influence of exchange coupling on current-driven domain wall motion in a nanowire

Komine¹,

Takahashi²,

Murakami³

et al. 2010

Journal of Magnetism and Magnetic Materials

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MRAM Cell Technology for Over 500-MHz SoC

Cited by 50 publications

References 15 publications

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Magnetization switching schemes for nanoscale three-terminal spintronics devices

A Counter-based Read Circuit Tolerant to Process Variation for 0.4-V Operating STT-MRAM

Influence of exchange coupling on current-driven domain wall motion in a nanowire

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