26th Optoelectronics and Communications Conference 2021
DOI: 10.1364/oecc.2021.t1d.3
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MQW laser with surface electrodes on directly bonded InP/SiO2/Si substrates

Abstract: We bonded the InP film on the SiO2/Si substrate and grow the LD on the InP film. The lasing characteristics of the LD on InP/SiO2/Si substrate was closer to the LD on InP substrate.

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