MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers

Tuna, Ö.; Hahn, Hernsoo; Kalisch, H.; Giesen, C.; Vescan, A.; Rzheutski, M. V.; Pavlovskii, V. N.; Луценко, Е. В.; Yablonskii, G. P.; Heuken, M.

doi:10.1016/j.jcrysgro.2012.09.055

Cited by 4 publications

(2 citation statements)

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“…The construction of M-S heterojunction and the introduction of La lead to a strong compensation of free holes and p-type conductivity. [43] In addition, the absolute value of La/La 2 O 2 S 1Àx slope is higher than that of La/La 2 O 2 S, indicating higher acceptor concentration and decrease of hole concentration in the valence band in La/La 2 O 2 S 1Àx [44,45] which is attributed to higher energy of valance band (E v ) in La/La 2 O 2 S 1Àx compared with La/La 2 O 2 S. The fall of the energy barrier in La/La 2 O 2 S 1Àx decreases the hole concentration and reduces the probability of recombination of holes and electrons, thus boosting the electrocatalytic performances.…”

Section: Electrocatalytic Performancesmentioning

confidence: 99%

Rare‐Earth Lanthanum Tailoring Mott–Schottky Heterojunction by Sulfur Vacancy Modification as a Bifunctional Electrocatalyst for Zinc–Air Battery

Yang

et al. 2022

Small Structures

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Zinc–air battery (ZAB) has considerable potential to be applied in the energy storage field. The main commercial electrocatalysts are Pt/C and RuO2, which are expensive and cannot possess good bifunctional electrocatalytic activities including oxygen reduction reaction and oxygen evolution reaction. Herein, the rare‐earth metal lanthanum is first constructed to be a Mott–Schottky heterojunction, and the S vacancy is introduced into the Mott–Schottky heterojunction. The so‐obtained La/La2O2S1−x shows excellent bifunctional electrocatalytic activity with ΔE of 0.68 V, which is superior to La/La2O2S without S vacancies and the commercial Pt/C + RuO2 system. In addition, the La/La2O2S1−x is assembled into ZABs, showing a high open power density of 212 mW cm−2, and a large specific capacity of 707 mAh g−1, as good cycle stability. The density functional theory calculations reveal the tailoring effect of S vacancy on the Schottky barrier to control the electron transfer concentration and ameliorate over‐strong adsorption, which blocks the reflux of electrons and promotes the unidirectional flow of electrons. In addition, the S vacancy modulates the electron cloud of La‐4f orbit and makes the electrocatalytic pathway closer to the ideal pathway.

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Section: Electrocatalytic Performancesmentioning

confidence: 99%

Rare‐Earth Lanthanum Tailoring Mott–Schottky Heterojunction by Sulfur Vacancy Modification as a Bifunctional Electrocatalyst for Zinc–Air Battery

Yang

et al. 2022

Small Structures

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“…A similar annealing is necessary to get a low resistive pInGaN. In almost all cases, temperatures of Mg activation (T act ) for InGaN are lower than those for their growth (T g ) [4][5][6][7][8][9]. However, it has been still unclear that the preparation of p-InGaN with intermediate In compositions needs T act same as that for p-GaN preparation.…”

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confidence: 99%

Thick (~1 μm) p‐type In_xGa_1–xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C)

Yamamoto

Hasan

Shigekawa

et al. 2015

Physica Status Solidi (b)

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This paper reports the post‐growth annealing effects of low‐temperature grown Mg‐doped InGaN. By using MOVPE, 1 μm‐thick Mg‐doped InxGa1–xN (x ~ 0.36) films are grown at 570 °C. In order to activate the Mg acceptors, grown samples are treated by the conventional furnace annealing (FA) or the rapid thermal annealing (RTA). In the case of the FA at 650 °C for 20 min, the InGaN film is phase‐separated. On the other hand, the RTA at a temperature higher than 700 °C enables us to get p‐type samples. By using the RTA at 850 for 20 s, p‐type samples with a hole concentration 1018–1019 cm−3 are successfully obtained without phase separation.

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A density functional theory study on the gas-phase formation of InGaN by metalorganic chemical vapor deposition

Sun,

Su,

Zhang

et al. 2024

Journal of Crystal Growth

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MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers

Cited by 4 publications

References 19 publications

Rare‐Earth Lanthanum Tailoring Mott–Schottky Heterojunction by Sulfur Vacancy Modification as a Bifunctional Electrocatalyst for Zinc–Air Battery

Rare‐Earth Lanthanum Tailoring Mott–Schottky Heterojunction by Sulfur Vacancy Modification as a Bifunctional Electrocatalyst for Zinc–Air Battery

Thick (~1 μm) p‐type In_xGa_1–xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C)

A density functional theory study on the gas-phase formation of InGaN by metalorganic chemical vapor deposition

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MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers

Cited by 4 publications

References 19 publications

Rare‐Earth Lanthanum Tailoring Mott–Schottky Heterojunction by Sulfur Vacancy Modification as a Bifunctional Electrocatalyst for Zinc–Air Battery

Rare‐Earth Lanthanum Tailoring Mott–Schottky Heterojunction by Sulfur Vacancy Modification as a Bifunctional Electrocatalyst for Zinc–Air Battery

Thick (~1 μm) p‐type InxGa1–xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C)

A density functional theory study on the gas-phase formation of InGaN by metalorganic chemical vapor deposition

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Thick (~1 μm) p‐type In_xGa_1–xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C)