MOVPE growth of ZnSxSe1−x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors

Synthesis of ZnSxSe1-x(0<x<1) nanocrystalline thin films by high-pressure sputtering

“…The experimental observations published so far on nanocrystalline semiconducting materials have mainly been on elemental or binary compound semiconductors. In recent times, ZnSe and ZnS x Se 1−x alloys have been extensively studied [5][6][7][8][9][10] for the realization of blue-light emitting diodes (blue-LEDs) and laser diodes. The effective control of the electrical properties through doping (especially p-type) and the reduction of the lattice mismatch with GaAs substrate were the key issues of research before the materials could be fruitfully utilized in device technology.…”

“…The effective control of the electrical properties through doping (especially p-type) and the reduction of the lattice mismatch with GaAs substrate were the key issues of research before the materials could be fruitfully utilized in device technology. ZnS x Se 1−x layers with x ∼ 0.05-0.08 on GaAs were almost perfectly lattice matched to the substrate [5][6][7][8][9][10] and well suited for fabricating LEDs and optoelectronic devices for the blue-green spectral region. Studies on ZnSe-based layers on GaP substrates for ultraviolet detectors have recently been reported by Sou et al [11] with ZnSSe active layers grown by molecular beam epitaxy (MBE).…”