MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures

Ludewig, Peter; Knaub, Nikolai; Stolz, W.; Volz, Kerstin

doi:10.1016/j.jcrysgro.2012.07.002

Cited by 59 publications

(46 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This growth methodology of Ga(AsBi) QW structures using MOVPE was described earlier in more detail. 12 The temperature changes applied before and after the growth of the QW were performed during TBAs stabilized growth interruptions. It is assumed that the segregated Bi that is left at the surface after the QW growth is stopped gets evaporated during the heating to 625 C. So far no influence of segregated Bi on the growth of the (AlGa)As barrier was found which supports this assumption.…”

mentioning

confidence: 99%

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Ludewig¹,

Knaub²,

Hossain³

et al. 2013

Applied Physics Letters

Self Cite

144

114

View full text Add to dashboard Cite

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ∼947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

show abstract

mentioning

confidence: 99%

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Ludewig¹,

Knaub²,

Hossain³

et al. 2013

Applied Physics Letters

Self Cite

144

114

View full text Add to dashboard Cite

show abstract

“…10,11 The substantial progress achieved in optimizing the device structure of MOVPE-grown Ga(As 1−x Bi x ) laser diodes has pointed to remaining defects in the bismide layer as a current limitation to device performance. 12 Multilayer quantum Ga(As 1−x Bi x )/GaAs structures have been grown successfully by at least two groups 10,13 with Bi concentrations, deduced from x-ray diffraction experiments, of up to x = 0.04. 10 These reports indicate that pulsing the Bi precursor flux into the reactor during planned growth of the bismide layer can enhance the uptake of Bi by the GaAs relative to what is achieved with a continuous flow.…”

mentioning

confidence: 99%

“…Specifically, the concentration profiles confirm that Bi must have remained on the surface after the Bi precursor was turned off and was subsequently incorporated into the film during "barrier" growth, as discussed elsewhere. 11,13,14 Once the Bi on the surface is depleted, nominally pure GaAs grew for the time remaining in the barrier growth step.…”

mentioning

confidence: 99%

Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging

et al. 2015

View full text Add to dashboard Cite

A set of GaAs1−xBix/GaAs multilayer quantum-well structures was deposited by metal-organic vapor phase epitaxy at 390 °C and 420 °C. The precursor fluxes were introduced with the intent of growing discrete and compositionally uniform GaAs1−xBix well and GaAs barrier layers in the epitaxial films. High-resolution high-angle annular-dark-field (or “Z-contrast”) scanning transmission electron microscopy imaging revealed concentration profiles that were periodic in the growth direction, but far more complicated in shape than the intended square wave. The observed composition profiles could explain various reports of physical properties measurements that suggest compositional inhomogeneity in GaAs1−xBix alloys as they currently are grown.

show abstract

“…[17][18][19] Surplus Bi that segregates at the surface is undesirable and hinders the growth of uniform GaAsBi layers. 20 This relative low crystal quality will seriously facilitate the high J th value, especially for the very low temperature growth of the GaAs barrier layers in the QW structure.…”

Section: Fig 2 Depicts Both Voltage-current (V-imentioning

confidence: 99%

Electrically injected GaAsBi/GaAs single quantum well laser diodes

Liu

Pan

et al. 2017

AIP Advances

View full text Add to dashboard Cite

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm -1 and transparency current density of 196 A/cm 2 . The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77∼150 K, and reduced to 90 K in the range of 150∼273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77∼273 K.

show abstract

MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures

Cited by 59 publications

References 14 publications

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging

Electrically injected GaAsBi/GaAs single quantum well laser diodes

Contact Info

Product

Resources

About