MOVPE growth and photoluminescence of wurtzite InN

Matsuoka, Takashi; Okamoto, Hiroshi; Takahata, Hiroko; Mitate, T.; Mizuno, Seiichiro; Uchiyama, Yoshiaki; Makimōto, Toshiki

doi:10.1016/j.jcrysgro.2004.05.057

Cited by 17 publications

(11 citation statements)

References 11 publications

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“…The growth of InN by MOVPE is perhaps the most difficult among the III-nitrides due to the weak In-N bond and consequent low decomposition temperature and the high equilibrium vapor pressure of N 2 over InN. Reasonably good quality c-plane (0 0 0 1) InN epilayers have been reported on c-plane sapphire via MOVPE and their properties have been extensively studied [2][3][4][5][6]. But the III-nitride heterostructures grown along the cdirection have strong polarization and piezoelectric induced electric fields which spatially separate the electrons and holes at the opposite interface and reduce the overlap of their wave functions [7,8].…”

Section: Introductionmentioning

confidence: 99%

Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire

Laskar

Kadir

Rahman

et al. 2010

Journal of Crystal Growth

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a b s t r a c tWe have performed a comprehensive investigation of the growth parameter space for the MOVPE of aplane ð1 1 2 0Þ InN on a-plane GaN buffer layers deposited on r-plane ð1 1 0 2Þ sapphire substrates. About 0:2 mm thick a-plane InN epilayers were grown on 1 mm thick a-plane GaN buffer layers in a closecoupled showerhead reactor. The growth parameters-substrate temperature, reactor pressure, V/III ratio-were systematically varied and their effect on structural, electrical, optical and morphological properties of a-plane InN films were studied. All a-plane InN epilayers show an anisotropy in the inplane mosaicity. The ð1 1 2 0Þ oÀfwhm varies depending on the scattering vector being parallel to the cdirection or the m-direction. The magnitude and nature of this anisotropy is strongly influenced by the growth parameters. In general compared to c-plane InN, we observed a higher growth rate and a slightly higher optimum growth temperature for the a-plane InN epilayers. The optimum growth conditions are found at T¼ 550 1C, P ¼ 500 Torr, V/III ¼ 11,000, where the oÀfwhm for symmetric ð1 1 2 0Þ reflections are 0.831 and 1.041 along [0 0 0 1] and ½1 1 0 0 directions, respectively, and for the skew-symmetric ð1 0 1 1Þ plane is 1.471. The optimized a-plane InN has a photoluminescence peak emission at 1750 nm (0.71 eV) at low temperature (11 K) and a mobility of 234 cm 2 /V s, carrier concentration 1.4 Â 10 19 cm À 3 at room temperature.

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Section: Introductionmentioning

confidence: 99%

Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire

Laskar

Kadir

Rahman

et al. 2010

Journal of Crystal Growth

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“…[1][2][3] Indium nitride is also of interest in relation to other technological applications such as solar cells and optical wave guides. 4,5 Moreover, recent studies show that InN and other III nitrides are promising materials for high-speed electronics and terahertz devices.…”

Section: Introductionmentioning

confidence: 99%

Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bondlike formation from first principles

Duan

Stampfl

2009

Phys. Rev. B

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We investigate the structural and electronic properties and formation energies of vacancy, interstitial, and antisite defects, as well as complex formation, in wurtzite InN using first-principles calculations. The N interstitial, which forms a split-interstitial configuration with a N 2 -like bonding, has the lowest formation energy under N-rich conditions in p-type material, where it is a triple donor. We find that indium vacancies have a tendency to form "clusters," which results in local nitrogen-rich regions and the formation of N x -molecular-like bonds. These complexes are amphoteric, have a relatively high formation energy, and are formed more readily under N-rich conditions. The nitrogen vacancy is a low energy defect under more In-rich conditions, and in p-type material it acts as a single and triple donor. In the neutral and negative charge states, we find nitrogen vacancies also prefer to be situated close to one another and to cluster, giving rise to local In-rich regions with electron localization at these metalliclike bonding configurations. The indium antisite in the 4+ charge state is the lowest-energy defect under In-rich conditions in p-type material and thus also acts as a donor. Our findings shed light on, and help explain, recent and sometimes conflicting, experimental observations.

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“…The synthesis of InN via metal-organic vapour phase epitaxy (MOVPE) is the most difficult among the IIInitrides because of its low dissociation temperature and the high equilibrium vapour pressure of N 2 over InN. Thus the temperature window for the growth of InN is very narrow, and thus MOVPE growth has usually been done at rather low temperatures with extremely high V/III ratios [1,2]. The growth is further complicated as the InN surface, unlike most III-Vs, cannot be stabilized under excess group V flux, and is etched in an ammonia ambient [3].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor

Kadir

Ganguli

Gokhale

et al. 2007

Journal of Crystal Growth

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MOVPE growth and photoluminescence of wurtzite InN

Cited by 17 publications

References 11 publications

Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire

Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire

Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bondlike formation from first principles

Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor

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