1991
DOI: 10.1364/ol.16.001080
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Moving grating and dc external field in photorefractive GaP at 633 nm

Abstract: We demonstrate that the photorefractive effect in GaP crystal at 633 nm can be enhanced using an externally applied dc field and a moving grating. A two-beam coupling gain coefficient of 2.5 cm(-1) and a steady-state phase-conjugate reflectivity of 1.9% were obtained.

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Cited by 8 publications
(2 citation statements)
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“…The presence of hole-electron competition in photorefractive materials has been reported by several researchers [3][4][5][6][7][8][9][10][11][12][13] in the past. The resonance peaks corresponding to electron-donor centers have been also frequently reported, particularly for fast materials like sillenites 2,3,[14][15][16] (Bi 12 TiO 20 , Bi 12 SiO 20 and Bi 12 GeO 20 ) and semiconductor [17][18][19] (GaAs, InP, etc.) photorefractives.…”
Section: Introductionmentioning
confidence: 76%
“…The presence of hole-electron competition in photorefractive materials has been reported by several researchers [3][4][5][6][7][8][9][10][11][12][13] in the past. The resonance peaks corresponding to electron-donor centers have been also frequently reported, particularly for fast materials like sillenites 2,3,[14][15][16] (Bi 12 TiO 20 , Bi 12 SiO 20 and Bi 12 GeO 20 ) and semiconductor [17][18][19] (GaAs, InP, etc.) photorefractives.…”
Section: Introductionmentioning
confidence: 76%
“…Cela peut facilement se faire en éclairant le cristal par une figure d'interférence mobile se déplaçant à la vitesse v, = coJk r selon k r [53,[94][95][96][97]. On peut utiliser deux techniques différentes pour créer ce déplacement.…”
Section: Intensification Du Gain Par La Technique Du Réseau Mobileunclassified