Mould shaping silicon crystal growth with a mould coating material by the spinning method

Hide, I.; Yokoyama, Takashi; Matsuyama, T.; Sawaya, K.; Suzuki, M.; Sasaki, Masashi; Maeda, Yasuhiro

doi:10.1016/0022-0248(86)90524-5

Cited by 16 publications

(2 citation statements)

References 3 publications

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“…6) However, this method of preparing a film on a substrate involves a high risk of fusion of the Si melt and the substrate because the film may peel off from the substrate. Therefore, in this study we examined a method for preparing a ceramic compact that repels Si melt.…”

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confidence: 99%

Preparation and evaluation of porous Si3N4 ceramic substrates that repel Si melt

Itoh

Okamura

Asanoma

et al. 2013

J. Ceram. Soc. Japan

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The porous ceramic substrate mainly consists of Si 3 N 4 that repels Si melt was prepared. Porous structure with pores in micronorder was prepared by thermal decomposition of polymethylmethacrylate spherical micro-particles of 210¯m in diameter. The contact angle between Si melt and the porous substrate is a maximum of 160°measured by high temperature in-situ observation. For the application, spherical Si crystals were successfully prepared on the porous substrate and the repetitive preparation of spherical Si on the same substrate confirmed that the porous substrate prevents the infiltration of Si melt and is continuously reusable for crystal growth of Si.

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Section: )mentioning

confidence: 99%

Preparation and evaluation of porous Si3N4 ceramic substrates that repel Si melt

Itoh

Okamura

Asanoma

et al. 2013

J. Ceram. Soc. Japan

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“…Development of substrates repelling Si melt was first reported by Hide . (1986) [2]. They formed a thick film composed of Si 3 N 4 and SiO 2 on a carbon substrate by spray coating method and fabricate Si sheets using dedicated molds.…”

Section: Introductionmentioning

confidence: 99%

Growth of Shaped Si Crystal Using Substrate Repelling Si Melt

Itoh

Okamura

Nakamura

et al. 2013

Trans. Mat. Res. Soc. Japan

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The cutting loss of Si ingot in conventional manufacturing process of Si wafers for solar cells is one of the main obstacles to reduce the cost of solar power generation. Growth of Si crystals without the cutting process is possible using substrates repelling Si melt. In this study, the porous ceramic substrate repelling Si melt was successfully developed and spherical Si and Si sheet crystals were directly prepared using this substrate. Effect of cooling rate on the quality of grown spherical Si crystals was also investigated. Spherical Si crystals consist of less than three grains were stably grown with cooling rate less than 100 K/h when the undercooling of Si melt was estimated to be 40 K. Slow cooling of Si melt on the substrate leads to low undercooling of Si melt that enables the growth of high quality spherical Si crystals. Carbon and oxygen concentration in the grown Si sheet crystal was below the specification value of Si for solar cells. Sticking or infiltration of Si against the substrate was not observed after the growth of Si crystals so the developed substrate is reusable multiple times.

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