2008
DOI: 10.1016/j.jmatprotec.2007.08.023
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Mott–Schottky analysis of aluminium oxide formed in the presence of different mediators on the surface of aluminium alloy 2024-T3

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Cited by 40 publications
(14 citation statements)
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“…Semiconductor properties of the passive film of aluminum or aluminum alloys have been widely reported [32][33][34][35][36][37], and the relevant results indicate that the passive film of aluminum or aluminum alloys presents either n-type [32,[34][35][36] or p-type property [33] depending on the environmental conditions. In order to reveal the effect of Ce content on the semiconductor properties of passive film, the Mott-Schottky curves are measured.…”
Section: Semiconductor Properties Of Passive Filmsmentioning
confidence: 99%
“…Semiconductor properties of the passive film of aluminum or aluminum alloys have been widely reported [32][33][34][35][36][37], and the relevant results indicate that the passive film of aluminum or aluminum alloys presents either n-type [32,[34][35][36] or p-type property [33] depending on the environmental conditions. In order to reveal the effect of Ce content on the semiconductor properties of passive film, the Mott-Schottky curves are measured.…”
Section: Semiconductor Properties Of Passive Filmsmentioning
confidence: 99%
“…Mott-Schottky (MS) analysis is an electrochemical method of studying surfaces, where the impedance response at fixed frequencies, but at different potentials, is scanned. MS analysis can be applied to determine electronic properties of samples, such as bandgap [12].…”
Section: Mott-schottky Analysismentioning
confidence: 99%
“…A significant number of works have been performed to characterize the passive films formed under various conditions [10][11][12][13][14][15][16][17][18]. For example, Bockris and coworkers [10,11] found a two-layer structure of passive film formed on Al alloy in sodium borate solution.…”
Section: Introductionmentioning
confidence: 99%
“…With respects to the semiconducting property of the passive film formed on Al alloys, there have existed controversial results. Fernandes et al [12] reported that the passive film formed on 2024 Al alloy in a sulphuric-boric bath shows an n-type semiconducting behavior, while Levine et al [13] determined that the passive film on 2024 Al alloy is a p-type semiconductor. Liu et al [19] demonstrated that passive films formed on 3003 Al alloy in air and in Na 2 SO 4 solutions in the absence and presence of chloride ions show an n-type semiconductor in nature.…”
Section: Introductionmentioning
confidence: 99%