2021
DOI: 10.1016/j.jallcom.2020.157320
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Motion-dispensing as an effective strategy for preparing efficient high-humidity processed perovskite solar cells

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Cited by 7 publications
(4 citation statements)
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“…The small peak declines for M1–M4 samples proportionally, which proves that the layer can repel moisture from being captivated into the other layers although the fabrication process is done under high humidity conditions (RH = 40–50%). The other characteristic peaks correspond well to MAPbI 3 (at 2θ = 14.5° and 28.7°) for all samples with crystal size obtained ~ 31.9 nm 42 , 43 . In addition, some miscellaneous peaks were detected, which explained the presence of residual CH 3 NH 3 I will be decomposed and the product of I 2 .…”
Section: Resultssupporting
confidence: 63%
“…The small peak declines for M1–M4 samples proportionally, which proves that the layer can repel moisture from being captivated into the other layers although the fabrication process is done under high humidity conditions (RH = 40–50%). The other characteristic peaks correspond well to MAPbI 3 (at 2θ = 14.5° and 28.7°) for all samples with crystal size obtained ~ 31.9 nm 42 , 43 . In addition, some miscellaneous peaks were detected, which explained the presence of residual CH 3 NH 3 I will be decomposed and the product of I 2 .…”
Section: Resultssupporting
confidence: 63%
“…electron∕sec photon∕sec = current∕(charge of 1 electron) (total power of photons)∕(energy of one photon) surface morphology of perovskite film, in which a few pinholes were present and the leakage current increased. Compared with the DDTS-5s, DDTS-10s, and DDTS-15s, the increased crystal size reduced the charge aggregation at the grain boundary, thereby improving the FF and V oc owing to the high-quality perovskite film formation and the decreased number of shunting pathways [36]. These findings showed that time variation significantly affected the morphology and thus contributed to improving device performance.…”
Section: Resultsmentioning
confidence: 91%
“…Generally, R s bounds up when the materials and wires are in contact, and the integration of R ct and CPE is related to the charge transport resistance at the heterojunction interface and associated capacitance. 37 The relevant fitted parameters are precisely listed in Table 2, and the higher R ct along with lower R s of the APP-modified PSC demonstrates strengthened charge injection and transfer at the interfaces. The reasonable explanation for these improved performance parameters is that the APP additive can slow down defect-assisted charge recombination and reduce the surface/interface defect density of the PSCs at the same time.…”
Section: Paper Dalton Transactionsmentioning
confidence: 99%