Motion Detection Using Tactile Sensors Based on Pressure-Sensitive Transistor Arrays

Abstract

<jats:p>In recent years, to develop more spontaneous and instant interfaces between a system and users, technology has evolved toward designing efficient and simple gesture recognition (GR) techniques. As a tool for acquiring human motion, a tactile sensor system, which converts the human touch signal into a single datum and executes a command by translating a bundle of data into a text language or triggering a preset sequence as a haptic motion, has been developed. The tactile sensor aims to collect comprehensive data on various motions, from the touch of a fingertip to large body movements. The sensor devices have different characteristics that are important for target applications. Furthermore, devices can be fabricated using various principles, and include piezoelectric, capacitive, piezoresistive, and field-effect transistor types, depending on the parameters to be achieved. Here, we introduce tactile sensors consisting of field-effect transistors (FETs). GR requires a process involving the acquisition of a large amount of data in an array rather than a single sensor, suggesting the importance of fabricating a tactile sensor as an array. In this case, an FET-type pressure sensor can exploit the advantages of active-matrix sensor arrays that allow high-array uniformity, high spatial contrast, and facile integration with electrical circuitry. We envision that tactile sensors based on FETs will be beneficial for GR as well as future applications, and these sensors will provide substantial opportunities for next-generation motion sensing systems.</jats:p>

3D Heterogeneous Device Arrays for Multiplexed Sensing Platforms Using Transfer of Perovskites

“…The application of tactile pressures can reduce the thickness of this elastomeric partition spacer, which results in increasing the drain current ( I D ) of FET as the gate–air–Si capacitance increases. [ 46,47 ] This pressure‐sensitive modulation in I D enables the individual air‐dielectric FET to act solely as a single pressure sensor. In addition, the integrated array of MAPbI 3− x Cl x photodetectors with 100 nm‐thick ITO electrodes was fabricated on another PEO sacrificial film where both layers of 1 µm‐thick parylene‐C and 500 nm‐thick SiO 2 were precoated (middle inset of Figure 5c).…”

Multimodal Digital X‐ray Scanners with Synchronous Mapping of Tactile Pressure Distributions using Perovskites

“…For the elastomeric partition spacer, poly(dimethylsiloxane) (PDMS) film (thickness of 35 µm) was cut by a laser ablation system (CO 2 laser, Epilog Mini 18, Cutting Edge Systems, Inc.) to make two holes for connecting the perovskite and drain electrodes and for defining the local air gap as the dielectrics (Figure 2c‐i). [ 41–43 ] The gate electrode (G) was formed by thermal evaporation of Cr/Au (5 nm/60 nm) and photolithography on the other panel of a 25‐µm‐thick PI film. Then, via holes were formed by a CO 2 laser at the same positions as those of the PDMS layer (Figure 2c‐ii).…”

Hybridized Nanogenerators for Multifunctional Self-Powered Sensing: Principles, Prototypes, and Perspectives

“…Motion sensors are widely used in automatic production because of their wide variety and rapid development ( Sasaki et al., 2017 ). The ability to sense the motion parameters such as displacement, speed, and acceleration direction is crucially important for the realization of automatic detection and automatic control ( Jang et al., 2020 ; Fong and Chan, 2010 ). In 2018, Chen et al.…”