2008
DOI: 10.1007/s10751-008-9791-9
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Mössbauer study of Fe in 3C-SiC following 57Mn implantation

Abstract: Ourinvestigations on substitutional and interstitial Fe in the group IV semiconductors, from 57 Fe Mössbauer measurements following 57 Mn implantation, have been continued with investigations in 3C-SiC. Mössbauer spectra were collected after implantation and measurement at temperatures from 300 to 905 K. Following

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Cited by 4 publications
(4 citation statements)
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“…This result explains the transformation of the Fe i,2 peak to the Fe i,1 peak observed in Ref. 36 upon annealing the SiC samples, allowing us to assign Fe i,1 and Fe i,2 peaks to Fe i,C and Fe i,Si , respectively.…”
Section: Iron In Other Group-iv Semiconductorssupporting
confidence: 68%
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“…This result explains the transformation of the Fe i,2 peak to the Fe i,1 peak observed in Ref. 36 upon annealing the SiC samples, allowing us to assign Fe i,1 and Fe i,2 peaks to Fe i,C and Fe i,Si , respectively.…”
Section: Iron In Other Group-iv Semiconductorssupporting
confidence: 68%
“…As E f (Fe Si ) is between 1.2 eV and 2.3 eV lower than E f (Fe C ), it suggests a preferential incorporation of Fe in the Si sites, allowing us to assign the observed peak at δ = −0.23 mm/s reported in Ref. 36 to Fe Si (compared to the calculated value of −0.27 mm/s).…”
Section: Iron In Other Group-iv Semiconductorsmentioning
confidence: 72%
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