Mössbauer study of Fe in 3C-SiC following 57Mn implantation

Bharuth-Ram, K.; Gunnlaugsson, H. P.; Mantovan, R.; Naicker, V. V.; Naidoo, D.; Sielemann, R.; Weyer, G.; Aigne, Th.

doi:10.1007/978-3-540-78697-9_84

Cited by 1 publication

(4 citation statements)

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“…Fe in SiC has also been investigated using 57 Mn → 57 Fe MS studies, in 3C-SiC by Bharuth-Ram et al [29] and in 6H-SiC by Gunnlaugsson et al [30]. The MS technique gives information on the charge distribution in the local environment of the probe atom via the hyperfine interaction and can thus be seen as a complementary technique to the EC method, which reveals the position of the probe atoms with respect to the three-dimensional lattice but lacks sensitivity to their immediate local environment.…”

Section: Resultsmentioning

confidence: 99%

“…Following RT implantation into 3C-SiC, Bharuth-Ram et al [29] reported the presence of ~15% of 57 Fe probes at substitutional sites (with no possibility of distinguishing between C and Si sites) and ~20% each on tetrahedral interstitial C and Si sites. The site fractions were evaluated up to ~600 °C implantation temperature, where the substitutional fraction had increased to ~20%, the fraction at T C sites to ~50% and the fraction at T Si sites almost disappeared to ~5%.…”

Section: Resultsmentioning

confidence: 99%

“…The experimental patterns are then compared to simulations, which allow one to iden-tify and quantify the site occupancy of the probe atoms. Specifically, for 59 Fe, the results will also be compared with the results obtained from 57 Mn → 57 Fe emission Mössbauer spectroscopy (MS) [29,30].…”

Section: Introductionmentioning

confidence: 99%

“…The error bars represent the spread in fitted fractions for the different crystallographic directions. In panel (b) the sum fraction of 57 Fe * on interstitital (T Si + T C ) sites derived from the Mössbauer experiments of[29] is shown by orange stars.…”

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Lattice location of implanted transition metals in 3C–SiC

Costa

Wahl

Correia

et al. 2017

J. Phys. D: Appl. Phys.

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We have investigated the lattice location of implanted transition metal (TM) 56 Mn, 59 Fe and 65 Ni ions in undoped single-crystalline cubic 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-implanted state, most Mn, Fe and Ni atoms occupy carbon-coordinated tetrahedral interstitial sites (T C). Smaller TM fractions were also found on Si substitutional (S Si) sites. The TM atoms partially disappear from ideal-T C positions during annealing at temperatures between 500 °C and 700 °C, which is accompanied by an increase in the TM fraction occupying both S Si sites and random sites. An explanation is given according to what is known about the annealing mechanisms of silicon vacancies in silicon carbide. The origin of the observed lattice sites and their changes with thermal annealing are discussed and compared to the case of Si, highlighting the feature that the interstitial migration of TMs in SiC is much slower than in Si.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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