Mössbauer study of Fe in GaAs following 57Mn +  implantation

Abstract

Mössbauer measurements have been performed on a GaAs single crystal sample following the implantation of radioactive 57 Mn + (T 1 / 2 = 1.5 min) ions. The Mn + ions were implanted with 60 keV energy into a GaAs sample held at temperatures of 300-700 K in an implantation chamber. Implantation fluences were <2 × 10 12 ions/cm 2 which assured single ion implantations. Mössbauer spectra were measured with a resonance detector equipped with 57 Fe enriched stainless steel foils mounted on a conventional drive system outside the implantation chamber. The spectra at K. Bharuth-Ram (B) iThemba LABS,