Mössbauer spectroscopy of laser annealed tellurium implanted silicon (II).129I

Local Atomic-Jump Process of Iron inα−Zr

“…The Mossbauer spectra of the present work are simpler than those of Kemerink et al, 15 which is why the interpretation is easier. This is because the in-beam Mossbauer technique enables us to study tiny concentrations of completely isolated Mossbauer probe atoms implanted one by one directly into interstitial sites.…”

“…A particularly interesting result in the spectra is the remarkable anisotropy of the intensity of one Mossbauer component at high temperatures. In an extensive discussion 15 Kemerink et al were able to assign this effect and other more complex changes in the Mossbauer spectra with increasing temperature to quadrupole relaxation and an anisotropic decrease of a "jump Debye-Waller factor. "…”