MOSFET-Only filter design automation based on polynomial regression with exemplary circuits

Ozenli, Deniz; Alaybeyoglu, Ersin; Kuntman, Hakan; Çiçekoğlu, Oğüzhan

doi:10.1016/j.aeue.2017.11.014

Cited by 17 publications

(19 citation statements)

References 32 publications

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“…In these formulations, change of V TH of each MOSFET due to bulk‐source disconnection is detected by operating point analysis in SPICE. Hence, this value is added to their small signal parameters reformulations to increase calculation accuracy based on Ozenli et al 35 Also, “c” and “p” are constants with different units having normalized values between ±0.1 and ±5. Core circuit in a good agreement with design constraints goes to the biasing block to be constructed bias circuit by using core transistor currents.…”

Section: Proposed Filter Structure With Design Methodologymentioning

confidence: 99%

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

Ozenli

Yeşil

Kuntman

2021

Circuit Theory & Apps

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Summary In this work, a novel current‐mode filter is presented including a PMOS grounded capacitor and a metal insulator metal structure (MIM‐cap). Proposed filter's cut‐off frequency can be easily adjusted from 10 up to 35 MHz. The wide tuning range of the proposed filter is designed to cover the need of baseband filter in the high‐frequency band and wireless applications such as CDMA, IEEE802.11a/g, IEEE 802.11b, and IEEE 802.11n. In addition, the proposed filter is designed by using a design methodology employing polynomial regressive models of small signal parameters of transistors to provide design accuracy as high as possible. Designed filter structure has layout with 52.1 μm × 62.6 μm chip area, and post‐layout simulations are given extensively to prove performance of the filter. Furthermore, 1‐dB compression point and IIP3 analyses are highlighted to observe linearity of band‐pass output of the filter structure. Also, input‐referred noise characteristics of the filter outputs are investigated to overcome thermal noise effects worsening the performance for a wide range of operating frequency interval. Provided results show that the proposed filter scheme brings a promising opportunity to designers for the high‐frequency region operations.

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Section: Proposed Filter Structure With Design Methodologymentioning

confidence: 99%

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

Ozenli

Yeşil

Kuntman

2021

Circuit Theory & Apps

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“…This will disturb the low-frequency response of the filter. From (11) and (12), the gains of the VM and TAM BPF at low frequencies such as f = 0 Hz can be expressed as It is easily seen from (19) and (20) that output transconductance values of M 1 and M B transistors should be decreased by means of increasing length of M 1 and M B transistors and therefore its effect can be diminished. Equivalent resistance seen from the output terminal of VM BPF in the first proposed circuit can be calculated through parasitic equivalent circuit shown in Fig.…”

Section: Proposed Circuitmentioning

confidence: 99%

“…Table 5 summarises the significant performance parameters of the proposed filters. The main properties of the high-order filters, MOSFET-only filters, and TAM filters in [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] and the proposed ones are summarised in Table 6 (see the Appendix for details).…”

Section: Proposed Circuitmentioning

confidence: 99%

“…In the literature, biquad filter [14][15][16][17][18][19] employing only MOSFET parameter such as transconductance and gate to source capacitance has been presented. References [14,15] proposed CM LPF and BPF consisting of only two transistors in the core structure.…”

Section: Introductionmentioning

confidence: 99%

“…The overall structure consists of nine transistors. Ozenli , et al [19] proposed new automation method using MOSFET‐only or MOSFET‐C structure. As an example circuit, the authors proposed second‐order CM mode MOSFET‐only filters, having LP and BP output, consisting of eight MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

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High‐order realisation of MOSFET‐only band‐pass filters for RF applications

Yeşil¹,

Mınaeı

2018

IET Circuits, Devices & Systems

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The authors present two new metal oxide semiconductor field effect transistor (MOSFET)-only second-order voltage and transadmittance-mode band-pass filters (BPFs) employing only five transistors without using any passive elements such as a resistor, a capacitor, and an inductor. As a result, both proposed circuits possess low-power consumption and occupy small chip area. The first proposed filter enjoys low output impedance and offset cancellation for voltage-mode operation while the second proposed filter has low supply voltage. The centre frequency of both proposed filters can be electronically tuned by varying biasing voltage. To demonstrate the performance of the proposed filters, effects of output transconductance of transistors have been investigated and equations of input referred noise have been obtained. Furthermore, fourth-order voltage and transadmittance-mode BPF which is derived the first proposed filter is presented and its simulation results are given. All proposed filters are laid-out in the Cadence environment using Taiwan semiconductor manufacturing company (TSMC) 0.18 µm complementary metal oxide semiconductor (CMOS) technology parameters. The required chip area of the fourth-order voltage and transadmittance-mode band-pass filter is 1100 μm 2 and the power consumption is about 436 µW.

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Generalization of shadow filters in fractional domain

Varshney

Pandey

2021

Circuit Theory & Apps

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This work is intended to generalize the design of shadow filters to the fractional-order domain. Shadow filters, in integer-order domain, introduced by Lakys and Fabre, consist of an external amplifier in the feedback loop of the basic filter cell and by varying the gain of this amplifier the parameters of the resulting filter are modified without disturbing the active and passive components of the filter itself. In particular, we consider here the case where a basic 2α order filter is constructed using two fractional-order capacitors both of the same order α. Mathematical formulations are drafted for pole frequency and pole quality factor for different feedback signals with various cases of stability and demonstrated using MATLAB simulations. Functional verification of the proposed theory is verified using an active filter example, designed around operational transconductance amplifier (OTA), through SPICE using 180 nm CMOS technology model parameters.

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MOSFET-Only filter design automation based on polynomial regression with exemplary circuits

Cited by 17 publications

References 32 publications

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

High‐order realisation of MOSFET‐only band‐pass filters for RF applications

Generalization of shadow filters in fractional domain

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