MOSFET loss evaluation for a low-power StandAlone photovoltaic-LED system

Abstract

Abstract-This paper presents a performance evaluation and comparison of state-of-the-art low voltage Si MOSFETs for a stand-alone photovoltaic-LED Light to Light (LtL) system. The complete system is formed by two cascaded converters that will be optimized for a determined solar irradiation and LED illumination profiles. The comparison is performed based on dynamic characterization and evaluation of the devices energy loss at different current levels.

Loss distribution analysis of a three-port converter for low-power stand-alone light-to-light systems

“…Therefore, a careful selection of the power stage switches in terms of gate charge Q G and output capacitance C oss must be carried out. Selection of M 1 , M 2 and M 3 is performed to achieve high efficiency at low power levels by minimizing capacitive and gate drive losses as presented in [22]. On the other hand, the power flow control devices M 4 and M 5 do not contribute to the switching loss, therefore, the selected devices aim to minimize the conduction loss.…”

“…However, the switching losses are difficult to calculate due to the circuit parasitic inductances and MOS-FET input and output capacitances, C iss and C oss , which are highly nonlinear. A measurement of the energy loss as presented in [22], provides more accurate results because the device performance can be measured at the exact operating conditions. In order to evaluate the converter switching losses a measurement of the semiconductor energy loss on the tapped boost stage is performed.…”

Photovoltaic OLED Driver for Low-Power Stand-Alone Light-to-Light Systems

“…However, the converter efficiency is very important in utilizing as much energy as possible from the sun, relaxing the oversize tradeoff requirements of the rest of the components in the system. In [14] it was emphasized that especially the system efficiency in stand-alone PV-systems at low power levels has to be maximized based on solar irradiation data from a northern latitude. Furthermore, in the same work, a semiconductor loss evaluation was done concluding that the gate energy loss is the dominant part of the losses, hence the MOSFETs should be selected especially based on having a low gate charge requirement.…”

“…Based on [14] the switching devices was all chosen to be the MOSFET BSC050NE2LS from Infineon featuring the key parameters seen in Table III (from datasheet [15]). …”