1993
DOI: 10.1007/978-3-7091-9247-4_6
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MOSFET DC Model

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Cited by 6 publications
(1 citation statement)
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“…4,5,29 In a FET configuration, the nanotube resting on a substrate forms the conduction channel flanked on either sides by source and drain electrodes as shown in Figure 2.6a, which is analogous to the metal-oxidesemiconductor field-effect transistors (MOSFETs). 46,47 The modulation in the electronic transport of a SWCNT because of surface charge variations forms the basis for their use as electronic sensors. As-grown CNTs are p-type due to oxygen adsorption during growth.…”
Section: Cnts In Sensing Applicationsmentioning
confidence: 99%
“…4,5,29 In a FET configuration, the nanotube resting on a substrate forms the conduction channel flanked on either sides by source and drain electrodes as shown in Figure 2.6a, which is analogous to the metal-oxidesemiconductor field-effect transistors (MOSFETs). 46,47 The modulation in the electronic transport of a SWCNT because of surface charge variations forms the basis for their use as electronic sensors. As-grown CNTs are p-type due to oxygen adsorption during growth.…”
Section: Cnts In Sensing Applicationsmentioning
confidence: 99%