MOSFET-Based Memristor for High-Frequency Signal Processing

Ghosh, Mourina; Singh, Ankur; Borah, Shekhar Suman; Vista, John; Ranjan, Ashish; Kumar, Santosh

doi:10.1109/ted.2022.3160940

Cited by 25 publications

(7 citation statements)

References 43 publications

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“…Table II details a comparative summary of selected previous MREs [13,16,17,19,20,33,34,35,36,37,38,39,40,41,42,43,44,45] based on active/passive elements, circuit structure, and simulation/experimental validations. MOSFET counts is more in [13,16,17,19,20].…”

Section: Comparison and Discussionmentioning

confidence: 99%

See 1 more Smart Citation

New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications

Srivastava,

Sharma,

Gupta

et al. 2024

IEEE Access

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A new proposition of passive (no external DC bias) memristor emulator (MRE) utilizing DTMOS technique which consists of four MOSFETs and a capacitor has been presented. The proposed MRE exhibits high operating frequency (∼ 500MHz), zero static power and shows incremental behavior. The conventional mathematical equation of MRE has been derived considering the second-order effects of all the MOSFETs utilized. The proposed circuit has been simulated by the Cadence Virtuoso (IC617) spectre tool using 180 nm technology parameters. The layout occupies 1305µm 2 area. The experimental verification has been carried out utilizing ALD1116 and ALD1117 dual N-channel and P-channel MOSFET arrays to demonstrate the practical viability. Finally, different possible applications namely; analog filters, oscillators (simple and chaotic), Schmitt trigger, Amoeba learning have been realized using proposed MRE to show its neuromorphic capability. Also, new logical AND & OR and NOT circuit configurations have been designed using proposed MRE.

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Section: Comparison and Discussionmentioning

confidence: 99%

“…MOSFET counts is more in [13,16,17,19,20]. The operating frequency is not very high in [33,34,35,36,37,38,39,40,41,42,43,44,45,46,47]. While [43] operates on a high frequency but dissipates certain power.…”

Section: Comparison and Discussionmentioning

confidence: 99%

New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications

Srivastava,

Sharma,

Gupta

et al. 2024

IEEE Access

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“…In other words, the control over the capacitance is lost whereas the design presented here has the added advantage of tunability since the capacitor is externally connected to the circuit and can be tuned as per the requirement. 6) Far more energy efficient than [21] as the power consumption of the model is around 2.6µW while the proposed emulator has a dynamic power consumption of 175nW only i.e., a power reduction by ∼ 67 % .…”

Section: Comparison With Existing Memristor Emulatormentioning

confidence: 99%

“…The work in [19] constitutes a memristor emulator with four transistors operating up to 100MHz. Also, a new passive floating/grounder memristor emulator has been reported in [20] while Ghosh et al in [21] presented the work with three N-type MOS having a power consumption of 2.6 µW. Meanwhile, some other works of literature containing memristor emulator circuits are reported in [22]- [24].…”

Section: Introductionmentioning

confidence: 99%

New Zero Power Memristor Emulator Model and Its Application in Memristive Neural Computation

et al. 2023

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We present here a simple three P-type MOSFET-based grounded memristor emulator model. The model is designed to achieve zero static power dissipation and is done so by eliminating the external DC supply i.e., no DC bias. The proposed memristor emulator model has extremely low dynamic power dissipation as well which comes to around 175 nW i.e., ∼ 67 % improvement compared to recent work. A mathematical analysis is carried out to present the relevance of this design. Simulations were done on Cadence Virtuoso 90 nm technology node and fingerprints of the proposed memristor emulator were obtained. The layout area occupied by the model is approx 1154.69 µm 2 and an external capacitor is connected to add tunability to the circuit. Furthermore, Monte Carlo and corner analysis validate the robust nature of the design. Besides, simulations have been experimentally verified using CD-4007 CMOS integrated circuit (IC) to make the design practically feasible. Furthermore, the design offers advantages such as extremely less overall power consumption and smaller chip area that could possibly pave the path for fabrication using standard CMOS technologies. At last, an application of the proposed model depicting in-memory computation through a memristor emulator crossbar array is presented in brief.

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“…In order to explore various applications of memristors, researchers have developed a variety of memristor models with different advantages and disadvantages. For example, Mourina Ghosh et al reported that a simple floating memristor emulator with a high-operating frequency range and low power dissipation that is suitable for Integrated circuit (IC) fabrication using only three Negative Channel-Metal-Oxide-Semiconductor (NMOS) transistors and the operating frequency of this memristor emulator reaches up to 50 MHz [2]. The memristor emulator reported in [3], which is suitable for analog as well as digital applications, uses three NMOS transistors, a current source and an external capacitor.…”

Section: Introductionmentioning

confidence: 99%

An ultra-high-frequency memristor circuit model

Wang,

Liu

et al. 2024

Semicond. Sci. Technol.

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In the context of sixth-generation (6G) wireless communications technology, advanced radio-frequency (RF) switches are required to accommodate high-frequency terahertz range and complex modulation techniques. This paper proposes a flexible charge-controlled memristor model specifically designed for ultra-high-frequency applications. It describes in detail the derivation of the behavior model of the proposed memristor circuit. The memristor circuit model is built around four inverters, two multipliers, one integrator, one adder, and one differentiator. Through PSPICE simulation, the typical hysteresis loop of the memristor is thoroughly analyzed, demonstrating its suitability for use in wireless communication systems. The model exhibits a good typical hysteresis loop that operates over a wide frequency range from 100 kHz to 20 THz, meeting the specific requirements of terahertz applications. Compared to existing memristor designs, it operates at a much higher frequency. However, the zero crossing of the typical hysteresis loop deviates when the operating frequency exceeds 20 THz. Furthermore, the proposed memristor model can be customized in terms of set/reset voltage, operating frequency and R_off⁄R_on , and has been verified for use in high speed switches with switching speeds of 19.5 ps. Furthermore, this research fills the gap in ultra-high-frequency memristor modeling, offering valuable insights and guidance for the utilization of memristors in the 6G technology and ultra-high frequency fields.

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MOSFET-Based Memristor for High-Frequency Signal Processing

Cited by 25 publications

References 43 publications

New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications

New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications

New Zero Power Memristor Emulator Model and Its Application in Memristive Neural Computation

An ultra-high-frequency memristor circuit model

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