MoSe2/WS2 heterojunction photodiode integrated with a silicon nitride waveguide for near infrared light detection with high responsivity

Abstract

We demonstrate experimentally the realization and the characterization of a chip-scale integrated photodetector for the near-infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon nitride waveguide. This configuration achieves high responsivity of ~1 A W−1 at the wavelength of 780 nm (indicating an internal gain mechanism) while suppressing the dark current to the level of ~50 pA, much lower as compared to a reference sample of just MoSe2 without WS2. We have measured the power spectral density of the dark current to be as low as ~1 × 10−12 A Hz−0.5, from which we extract the noise equivalent power (NEP) to be ~1 × 10−12 W Hz−0.5. To demonstrate the usefulness of the device, we use it for the characterization of the transfer function of a microring resonator that is integrated on the same chip as the photodetector. The ability to integrate local photodetectors on a chip and to operate such devices with high performance at the near-infrared regime is expected to play a critical role in future integrated devices in the field of optical communications, quantum photonics, biochemical sensing, and more.

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

“…In addition, it is also competitive among the state-of-the-art photodetectors built of low-dimensional materials (Table S2, ESI †). In the future, the device performance of the Bi 2 S 3 photodetectors can be further ameliorated through a variety of strategies such as dielectric engineering, 50 optical waveguide/cavity/resonator integration, [51][52][53] coupling optical antennas/light-trapping nanostructures, [54][55][56] etc.…”

Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides

“…49 This demonstrates the flexibility of this on-chip approach and opens up its use in many different applications such as in vivo glucose monitoring 50,51 and fiber Bragg grating readout. 52 ■ DISCUSSION Most of the photodetectors integrated on SiN waveguides reported in literature were based on bonded or transfer-printed III−V semiconductors, 37,53 Ge monolithically grown on Si, 54,55 and two-dimensional materials, 56,57 approaches that result in increased integration complexity. Integration of evaporated amorphous 58 and polycrystalline 59 photoconductors has also been demonstrated, offering promising pathways for less complex heterogeneous integration.…”

“…While the saturation power of WG-QDPDs is better than that of two-dimensional materials photodetectors, 57 it is still not on par with III−V or Ge photodetectors, which have saturation powers exceeding 1 mW. 53,67 Hence, a significant enhancement of the saturation power is needed to make WG-QDPDs competitive in this way, a step that is contingent upon better fabrication techniques and the design and operation of the QDPD stack.…”

Photoresponse Improvement of InGaAs Nanowire Near-Infrared Photodetectors with Self-Assembled Monolayers

“…Near-infrared (NIR) photodetectors have a significantly important practical value in the application fields of telecommunications, biosensing, medical imaging, space monitoring, etc. − With the increasing demands for versatile optoelectronic applications, nanoscale photodetectors with superior detection performance, high sensitivity, and mechanical flexibility are extensively researched. − In the past decade, one-dimensional semiconductor nanowires (NWs), especially III–V compound NWs, have attracted considerable research attention for high-performance photodetectors due to their high carrier mobility, large surface-to-volume ratio, direct bandgap, excellent flexibility, and superior photoresponsibility in photoelectric detection. − In particular, ternary In x Ga 1– x As NWs are considered as promising candidates for integrated IR optoelectronic applications owing to their potential bandgap tunability from the NIR to the IR region (0.34–1.42 eV) at room temperature. − However, the large number of unstable surface states on InGaAs NWs cause nonradiative (NR) emissions, delay the response time of the devices, and limit the photocurrent, which remains a problem that cannot be ignored.…”