The high photo responsive property and flexibility of tailoring the optical properties of the semiconducting layered transition metal dichalcogenides are appealing and makes them potentially suitable for the optoelectronic and photo detecting applications. In the present study molybdenum diselenide (MoSe2) crystals are grown by direct vapor transport (DVT) technique in a dual zone horizontal furnace. To affirm the elemental composition and stoichiometric proportion of the as grown crystals, energy dispersive analysis of the x-ray were adopted. The surface morphological features of the grown crystals are investigated using visible microscope and scanning electron microscopy that attests the multilayer growth of crystals. The presence of single crystalline phase and hexagonal structure is ascertained by employing transmission electron microscopy. The direct optical energy band gap of 1.42eV is determined by UV-Visible spectroscopy. The Raman spectroscopy analysis carried out on the grown crystals reveals the presence of A1g mode of vibration. Photo detecting properties of the multilayer MoSe2 crystals are studied by exposing the basal plane of the photo-detecting sample by the polychromatic source of 70mW/cm2 intensity at different biasing voltages from 1V to 5V respectively. The eminent sensing properties of the grown multilayered crystals are unveiled by the high photo responsivity 58.2mA/Wm2 and specific detectivity 2.12 x 107 Jones. The effect of biasing voltage is prominently seen in the rise of photocurrent and detecting properties MoSe2 crystals.