MoS2 thin films prepared by sulfurization

Sojková, M.; Chromik, Andreas; Rosová, A.; Dobročka, Edmund; Hutár, Peter; Machajdík, D.; Kobzev, A.P.; Hulman, Martin

doi:10.1117/12.2273846

Cited by 6 publications

(5 citation statements)

References 11 publications

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“…The Mo layer was annealed in sulfur vapors at a high temperature of 800 °C in a N 2 atmosphere at ambient pressure. The substrate was placed together with the sulfur powder in the center of the furnace so that the temperature of the substrate and the powder were the same during the growth, , unlike the standard CVD method, which uses a two-zone furnace with different temperatures for the sulfur powder and the Mo substrate.…”

Section: Methodsmentioning

confidence: 99%

“…A higher contact angle means more terminated hydrogen on the surface and thus a better response to the exposed gas. It should be noted that the optimal contact angle for a good H-termination is at least 90°. ,, The contact angle of the prepared H-NCD/SiO 2 /Si samples was evaluated to be greater than 100°. The photographs of the measured contact angles are given in the Supporting Information (Table S1).…”

Section: Methodsmentioning

confidence: 99%

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Improved Gas Sensing Capabilities of MoS₂/Diamond Heterostructures at Room Temperature

Kočí

Izsák

Vanko

et al. 2023

ACS Appl. Mater. Interfaces

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Molybdenum disulfide (MoS 2 ) and nanocrystalline diamond (NCD) have attracted considerable attention due to their unique electronic structure and extraordinary physical and chemical properties in many applications, including sensor devices in gas sensing applications. Combining MoS 2 and H-terminated NCD (H-NCD) in a heterostructure design can improve the sensing performance due to their mutual advantages. In this study, the synthesis of MoS 2 and H-NCD thin films using appropriate physical/ chemical deposition methods and their analysis in terms of gas sensing properties in their individual and combined forms are demonstrated. The sensitivity and time domain characteristics of the sensors were investigated for three gases: oxidizing NO 2 , reducing NH 3 , and neutral synthetic air. It was observed that the MoS 2 /H-NCD heterostructure-based gas sensor exhibits improved sensitivity to oxidizing NO 2 (0.157%•ppm −1 ) and reducing NH 3 (0.188%•ppm −1 ) gases compared to pure active materials (pure MoS 2 achieves responses of 0.018%•ppm −1 for NO 2 and −0.0072%•ppm −1 for NH 3 , respectively, and almost no response for pure H-NCD at room temperature). Different gas interaction model pathways were developed to describe the current flow mechanism through the sensing area with/without the heterostructure. The gas interaction model independently considers the influence of each material (chemisorption for MoS 2 and surface doping mechanism for H-NCD) as well as the current flow mechanism through the formed P−N heterojunction.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Improved Gas Sensing Capabilities of MoS₂/Diamond Heterostructures at Room Temperature

Kočí

Izsák

Vanko

et al. 2023

ACS Appl. Mater. Interfaces

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“…The XRD spectra of the MoS x films are shown in Figure 4a The presence of such a number of peaks indicates that the films reveal a polycrystalline structure [46]. Moreover, for MoS x coatings with x > 1.3, the formation of a hexagonal atomic arrangement has the highest probability [18].…”

Section: Structural Properties Of the Mos X Filmsmentioning

confidence: 99%

“…The diffraction peaks at about 44° and 64° stem from the 100Cr6 substrate, while the other Bragg peaks are attributed to diffractions from the (002), (100), (101) and (110) planes of MoSx. The presence of such a number of peaks indicates that the films reveal a polycrystalline structure [46]. Moreover, for MoSx coatings with x > 1.3, the formation of a hexagonal atomic arrangement has the highest probability [18].…”

Section: Structural Properties Of the Mos X Filmsmentioning

confidence: 99%

Controlling the Structural, Mechanical and Frictional Properties of MoSx Coatings by High-Power Impulse Magnetron Sputtering

et al. 2020

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Tribology, as the science and technology of interacting surfaces, typically relies on liquid lubricants which reduce friction and wear. For environmentally friendly tribological purposes and applications requiring a liquid-free performance, solid lubricants, such as MoS2 coatings, play an essential role. It is crucial to understand the interplay between the parameters of the coating synthesis and the characteristics of the coating. The impact of the deposition parameters on the structural, mechanical and frictional properties of MoSx thin films, which are synthesized by high-power impulse magnetron sputtering, are studied. The morphology, topography and stoichiometry (2.02 < x < 2.22) of the films are controlled by, in particular, the bias-voltage and heating power applied during the sputtering process. In combination with a low pulse frequency the hardness and elastic stiffness of the MoSx films are enhanced up to 2 and 90 GPa, respectively. This enhancement is assigned to a shortening of the Mo-S bonding lengths and a strengthening in the interatomic coupling as well as to a formation of small-sized crystallites at the surface. The friction coefficient reduces to µ = 0.10 for films with an initial (100) orientation and the mean roughness of the MoSx films decreases below 15 nm by shortening the cathode pulses.

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“…Some of the Mo layers were left as-prepared, while some of the pre-deposited Mo layers were sulfurized in a custom-designed CVD chamber with a substrate and sulfur powder (0.5 g) placed at the same position and temperature in the center of the furnace − so-called one-zone sulfurization. 27 The annealing temperature, time, and heating ramp were 800 °C, 30 min, and 25 °C/min, respectively. The thickness of the MoS 2 films after sulfurization was found to be four times larger than that of the of initial Mo layer.…”

Section: ■ Introductionmentioning

confidence: 99%

Lithium-Induced Reorientation of Few-Layer MoS₂ Films

et al. 2023

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Molybdenum disulfide (MoS2) few-layer films have gained considerable attention for their possible applications in electronics and optics and also as a promising material for energy conversion and storage. Intercalating alkali metals, such as lithium, offers the opportunity to engineer the electronic properties of MoS2. However, the influence of lithium on the growth of MoS2 layers has not been fully explored. Here, we have studied how lithium affects the structural and optical properties of the MoS2 few-layer films prepared using a new method based on one-zone sulfurization with Li2S as a source of lithium. This method enables incorporation of Li into octahedral and tetrahedral sites of the already prepared MoS2 films or during MoS2 formation. Our results discover an important effect of lithium promoting the epitaxial growth and horizontal alignment of the films. Moreover, we have observed a vertical-to-horizontal reorientation in vertically aligned MoS2 films upon lithiation. The measurements show long-term stability and preserved chemical composition of the horizontally aligned Li-doped MoS2.

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MoS2 thin films prepared by sulfurization

Cited by 6 publications

References 11 publications

Improved Gas Sensing Capabilities of MoS₂/Diamond Heterostructures at Room Temperature

Improved Gas Sensing Capabilities of MoS₂/Diamond Heterostructures at Room Temperature

Controlling the Structural, Mechanical and Frictional Properties of MoSx Coatings by High-Power Impulse Magnetron Sputtering

Lithium-Induced Reorientation of Few-Layer MoS₂ Films

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MoS2 thin films prepared by sulfurization

Cited by 6 publications

References 11 publications

Improved Gas Sensing Capabilities of MoS2/Diamond Heterostructures at Room Temperature

Improved Gas Sensing Capabilities of MoS2/Diamond Heterostructures at Room Temperature

Controlling the Structural, Mechanical and Frictional Properties of MoSx Coatings by High-Power Impulse Magnetron Sputtering

Lithium-Induced Reorientation of Few-Layer MoS2 Films

Contact Info

Product

Resources

About

Improved Gas Sensing Capabilities of MoS₂/Diamond Heterostructures at Room Temperature

Improved Gas Sensing Capabilities of MoS₂/Diamond Heterostructures at Room Temperature

Lithium-Induced Reorientation of Few-Layer MoS₂ Films