2020
DOI: 10.1002/adfm.202000435
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MoS2 Van der Waals p–n Junctions Enabling Highly Selective Room‐Temperature NO2 Sensor

Abstract: Van der Waals p-n junctions of 2D materials present great potential for electronic devices due to the fascinating properties at the junction interface. In this work, an efficient gas sensor based on planar 2D van der Waals junctions is reported by stacking n-type and p-type atomically thin MoS 2 films, which are synthesized by chemical vapor deposition (CVD) and soft-chemistry route, respectively. The electrical conductivity of the van der Waals p-n junctions is found to be strongly affected by the exposure to… Show more

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Cited by 221 publications
(103 citation statements)
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References 49 publications
(61 reference statements)
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“…MoS 2 is one of the most extensively studied TMDs [56,60,64,65,[151][152][153][154], which has a hexagonal structure consisted of Mo and S atoms at alternating corners. The driving force to integrate MoS 2 into MEMS/NEMS is that, unlike graphene, it has an indirect bandgap of 1.29 eV [62].…”
Section: Mechanical Testing Of Mosmentioning
confidence: 99%
See 1 more Smart Citation
“…MoS 2 is one of the most extensively studied TMDs [56,60,64,65,[151][152][153][154], which has a hexagonal structure consisted of Mo and S atoms at alternating corners. The driving force to integrate MoS 2 into MEMS/NEMS is that, unlike graphene, it has an indirect bandgap of 1.29 eV [62].…”
Section: Mechanical Testing Of Mosmentioning
confidence: 99%
“…Layered TMDs consist of tiers of hexagonal lattices that are governed by the transition metal-chalcogen interaction. Molybdenum disulfide (MoS 2 ) is one of the most intensively studied TMDs [54][55][56][57][58][59][60][61] in which a layer of hexagonal Mo atoms is sandwiched by two layers of hexagonal S atoms. The driving force to integrate MoS 2 into MEMS/NEMS is that, unlike graphene, monolayer MoS 2 has a direct bandgap of 1.9 eV, which is important for semiconductor applications [62].…”
Section: Introductionmentioning
confidence: 99%
“…Their working principles are based on resistance change upon adsorption and desorption of target gas molecules on the surface of semiconductors. The chemoresistive gas sensors usually utilize various semiconducting materials including metal oxides [14][15][16][17][18][19][20][21][22] , 2dimensional (2D) materials [23][24][25][26][27][28][29][30] , or conductive polymers [31][32][33] . Although each material has been reported for its superior gas sensing characteristics to specific target gas molecules through various strategies, the common challenges exist, which is the high operating temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, inspired by the outstanding performance of heterojunction composite materials in gas sensors [25,26], it is a good strategy to further improve the positive humidity sensing properties of rGO by constructing heterojunction. In recent years, the transition metal dichalcogenides (TMDCs) have received considerable attention due to their unique electronic properties [27][28][29][30].…”
Section: Introductionmentioning
confidence: 99%