Abstract:A novel approach for the fabrication of a metal oxide semiconductor (MOS) structure was reported. The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy. This two-layer structure was thermally oxidized at 400 ı C for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate. Using deposition parameters, device dimensions and SEM micrographs of the layers, the device parameters were calculate… Show more
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