MOS gated Si:SiGe quantum wells formed by anodic oxidation

Abstract

Abstract.We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current-voltage and capacitance-voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.

Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1 xGex

“…Q f /q, D it and Q bt show a reducing trend with an increase in annealing temperature, and beyond 800 • C all of them start to increase. The value of D it for our samples annealed at 800 • C is 7.3 × 10 11 cm −2 eV −1 which is comparable to the value reported for the radio frequency (rf) plasma-grown oxides by Goh et al [13,14] and is lower than the midgap D it values for electrochemical anodic oxidation reported by Yeoh et al [15] and for PECVD oxides reported by Iyer et al [16].…”

Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18layers

“…It is seen that the midgap D it values of our samples are comparable with those of RF (radio-frequency) plasma-grown oxides reported by Goh et al [25,26]. But the midgap D it values reported by Iyer et al [24] and Yeoh et al [27] are higher.…”

“…We have also compared D it with values available in the literature [24][25][26][27], as shown in figure 4. It is seen that the midgap D it values of our samples are comparable with those of RF (radio-frequency) plasma-grown oxides reported by Goh et al [25,26].…”