Morphology engineering and etching of graphene domain by low-pressure chemical vapor deposition

Phase-field modelling of 2D island growth morphology in chemical vapor deposition

“…2(c) at high diffusivity. This shift of the island shape with increasing diffusivity is consistent with the general island shape evolution trend in experimental observations at various temperature conditions [11][12][13]. Similar compact shapes formed at high diffusivity have been explained in the solidification theory using the absolute stability condition [44].…”

“…The important role of the substrate temperature in 2D island morphology has been reported in many experimental studies [8,[11][12][13]. Several kinetic rates involved in the CVD growth process, including the adatom adsorption rate, the precursor decomposition rate and the substrate diffusivity, may change with the substrate temperature.…”

“…Among the various manufacturing approaches, the chemical vapor deposition (CVD) method is widely used to produce 2D materials in laboratories and industries [8]. Many theories have been proposed to understand the growth mechanism and control the growth process [9][10][11][12][13][14][15]. However, the precise control of the resulting 2D materials island shape, size and properties in CVD growth is still a challenge since a comprehensive understanding of the interplay between various physical Contribution to the Topical Issue "Branching Dynamics at the Mesoscopic Scale" edited by Yongsheng Han, Hui Xing, Dongke Sun.…”