Morphology-dependent upconversion luminescence of ZnO:Er3+ nanocrystals

Sun, Yajuan; Chen, Yue; Tian, Lijin; Yu, Yi; Kong, Xianggui; Zeng, Qinghui; Zhang, Youlin; Zhang, Hong

doi:10.1016/j.jlumin.2007.04.011

Cited by 63 publications

(19 citation statements)

References 39 publications

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“…The nanostructures of crystalline outgrowths have more surface defects due to their high surface-to-volume ratios. Previous reports have demonstrated that the surface of a semiconductor plays an important role in its visible emission [41,42]. Usually, surface states are involved in nonradiative relaxation processes.…”

Section: Resultsmentioning

confidence: 99%

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Hierarchical silver indium tungsten oxide mesocrystals with morphology-, pressure-, and temperature-dependent luminescence properties

Zhao

et al. 2010

Nano Res.

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Highly hierarchical structures of silver indium tungsten oxide (AgIn(WO 4 ) 2 ) mesocrystals can be rationally fabricated via the microwave-assisted synthesis method by tuning the initial concentrations of the precursors. Photoluminescence spectra of hierarchical AgIn(WO 4 ) 2 mesocrystals were measured to investigate the correlation between the morphology, pressure, and temperature and their luminescence properties. The materials showed interesting white emission when excited by visible light of wavelength 460 nm. AgIn(WO 4 ) 2 materials having different morphologies displayed notable differences in photogenerated emission performance. The emission was strongly correlated with the surface nanostructures of outgrowths, with larger amounts of outgrowths leading to stronger emission intensities. The pressure-and temperature-dependent photoluminescence properties of these materials have also been investigated under hydrostatic pressures up to 16 GPa at room temperature and in the temperature range from 10 to 300 K.

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Section: Resultsmentioning

confidence: 99%

“…Morphologydependent luminescence properties of semiconductors have been widely studied [25][26][27][28][29]. For example, Kan et al have convincingly established that the electronic structure and optical properties of InAs quantum rods are highly shape-dependent [30].…”

Section: Introductionmentioning

confidence: 99%

Hierarchical silver indium tungsten oxide mesocrystals with morphology-, pressure-, and temperature-dependent luminescence properties

Zhao

et al. 2010

Nano Res.

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“…Recently, Complex precursor method. [47] ZnO Eu, Er Hydrothermal [22,48,49] Er Atomic layer deposition [50] Dy, Tb, Er Isocrystalline core-shell (ICS) protocol [51] Eu, Pr Hydrothermal [52−54] Eu Electrochemical deposition [55] Er Ligand-capped/ligand-exchanging [56] Pr, Sm, Tb, Ho, Tm, Eu Sol-gel [17,57−59] Dy, Yb, Pr, Sm, Er Sol-gel [60−63] Er, Eu Chemical combustion [64,65] SnO 2 Nd Deposition [66] Eu Co-decomposition [38] Eu Impregnation and decomposition cycle [67] Eu Thermal evaporation [68] Er, Eu, Solvothermal [69−71] Tm Implantation [72] Eu Microwave synthesis [21] Eu Solid state chemical reaction [73] Er, Yb, Eu …”

Section: Synthesis Techniquesmentioning

confidence: 99%

Lanthanide-doped semiconductor nanocrystals: electronic structures and optical properties

2015

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solid state lightings [11,12]. Nevertheless, due to the parity forbidden transition nature, the absorption cross-section of f-f transition is small and usually high power light sources such as laser are needed to excite the Ln 3+ ions. The ability to excite Ln 3+ ions efficiently in a broad spectral range is strongly desired for realizing their full potentials in signaling and lighting applications. To improve the excitation efficiency of Ln 3+ , sensitization is an efficient way to avoid the direct excitation of the Ln 3+ . Charge transfer, electronics transfer from ligand ground states (e.g., O 1s) to the Ln 3+ excited states, has proved to be an efficient means to achieve intense Ln 3+ emissions, due to its large band absorption cross-section. By employing this strategy, commercial phosphor Y 2 O 3 :Eu 3+ has been demonstrated to be an excellent red phosphor, which can be effectively excited at Eu-O charge transfer band at 255 nm. Another strategy for efficient sensitization of Ln 3+ is via the energy transfer (ET) from semiconductor nanocrystals (SNCs), which generally possess large absorption cross-section for Ln 3+ excited states. Moreover, it is known that the exciton Bohr radius of semiconductors is much larger than that of insulators [13], which could result in pronounced quantum confinement effect for small nanocrystals (NCs) (e.g., 2−10 nm for In 2 O 3 , ZnO and TiO 2 ). As a result, the optical properties of Ln 3+ incorporated in SNCs could be tailored via size control or bandgap engineering, which is very attractive in fabricating a nano-device for technological applications. It is anticipated that the luminescence of Ln 3+ ions can be efficiently sensitized via the energy transfer from the excited host to Ln 3+ , which thereby overcomes the inefficient direct absorptions of the parity forbidden 4f-4f transitions of Ln 3+ ions (Fig. 1). To realize the efficient energy transfer and intense Ln 3+ PL, the successful incorporation of Ln 3+ into the lattices of SNCs is of utmost importance, which still remains a great challenge via conventional wet-chemical methods especially for some widely used wide bandgap Trivalent lanthanide (Ln 3+ ) ions doped semiconductor nanomaterials have recently attracted considerable attention owing to their distinct optical properties and their important applications in diverse fields such as optoelectronic devices, flat plane displays and luminescent biolabels. This review provides a comprehensive survey of the latest advances in the synthesis, electronic structures and optical spectra of Ln 3+ ions in wide band-gap semiconductor nanocrystals (SNCs). In particular, we highlight the general wet-chemical strategies to introduce Ln 3+ ions into host lattices, the local environments as well as the sensitization mechanism of Ln 3+ in SNCs. The energy levels and crystal-field parameters of Ln 3+ in various SNCs determined from energy-level-fitting are summarized, which is of vital importance to understanding the optical properties of Ln 3+ ions in SNCs. Finally, some future pros...

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“…36-1451) [16]. The weak impurity peaks at 29.2°, 48.7°, and 57.9°can be assigned to Er 2 O 3 [17]. Er 2 O 3 phase being detected implies that some Er 2 O 3 precipitated from ZnO host.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of Er3+–Ag co-doped ZnO nanocrystals prepared by combustions method

Yang

Zhang

Wang

et al. 2014

J Mater Sci: Mater Electron

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The Er 3? -Ag co-doped ZnO nanocrystals have been synthesized by citric acid-assisted combustions method. The effect of different concentration of silver nanoparticles (NPs) on Er 3? doped ZnO nanocrystals and the optical behaviors are explored. The nanocrystals were characterized by X-ray diffractions, scanning electron microscopy, UV-Vis-NIR absorption spectra, X-ray photoelectron spectroscopy, and photoluminescence, respectively. The luminous intensity of Er 3? doped ZnO nanocrystals was significantly influenced by the concentration of silver NPs. A large enhancement in up-conversion intensity has been observed when the concentration of silver NPs was 0.10 mol%. The effect of localized surface plasmon resonance of silver NPs and the energy transfer between the silver NPs and Er 3? ions ( 2 H 11/2 ? 4 I 15/2 , 4 S 3/2 ? 4 I 15/2 , and 4 F 9/2 ? 4 I 15/2 ) are discussed as the sources of enhancement or quenching.

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Morphology-dependent upconversion luminescence of ZnO:Er3+ nanocrystals

Cited by 63 publications

References 39 publications

Hierarchical silver indium tungsten oxide mesocrystals with morphology-, pressure-, and temperature-dependent luminescence properties

Hierarchical silver indium tungsten oxide mesocrystals with morphology-, pressure-, and temperature-dependent luminescence properties

Lanthanide-doped semiconductor nanocrystals: electronic structures and optical properties

Optical properties of Er3+–Ag co-doped ZnO nanocrystals prepared by combustions method

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