2012
DOI: 10.1039/c2ce26024g
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Morphology controlled synthesis of crystalline ZnO film by MOCVD: from hexagon to rhombus

Abstract: We grew crystalline ZnO films by non-catalyst metalorganic chemical vapor deposition. Through adjusting the mass flow rate of the diethylzinc source, the morphology of the crystalline ZnO film can be easily manipulated from hexagon to rhombus. The possible mechanism is the growth rate anisotropy, which is confirmed by FE-SEM, XRD, and TEM measurements.Crystal facet engineering has an important role in the performances of functional materials, such as heterogeneous catalysis, gas sensing, ion detection, molecul… Show more

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Cited by 9 publications
(6 citation statements)
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“…[5][6][7] Pei et al have successfully realized the rhombus ZnO by metal-organic chemical vapor deposition (MOCVD). 8 However, these methods face problems of complicated operation procedures and severe operating conditions. Thus it is urgent to introduce a controllable method with low cost, process simplicity, environmental friendliness and high yield of products to synthesize the unique architecture of rhombic ZnO NR arrays.…”
mentioning
confidence: 99%
“…[5][6][7] Pei et al have successfully realized the rhombus ZnO by metal-organic chemical vapor deposition (MOCVD). 8 However, these methods face problems of complicated operation procedures and severe operating conditions. Thus it is urgent to introduce a controllable method with low cost, process simplicity, environmental friendliness and high yield of products to synthesize the unique architecture of rhombic ZnO NR arrays.…”
mentioning
confidence: 99%
“…Even though zinc oxide can have two other crystalline structures-zinc-blende and rocksalt-, the high polarity of the Zn-O bond accounts for the preferential formation of wurtzite rather than zinc-blende, which is metastable, or rocksalt, which can only be obtained at high pressures. In the wurtzite crystal structure, hexagonal-close-packed (hcp) M. VERDE [15], RF magnetron sputtering [16], spray pyrolysis [17], metal organic chemical vapor deposition (MOCVD) [18] or pulsed laser deposition (PLD) [19]. Nevertheless, these techniques present important drawbacks, such as the high energy consumption and sophisticated instrumentation required for the transformation of the Zn precursors to the gas state, which increase their cost and make them hardly scalable.…”
Section: Introductionmentioning
confidence: 99%
“…2,3 These unique properties make ZnO a potential material for applications in electronics, optoelectronics, acoustics, and sensing. [1][2][3] Various growth techniques have been used to fabricate ZnO thin lms, such as molecular beam epitaxy (MBE), 4,5 metal-organic chemical vapor deposition (MOCVD), 6,7 chemical vapor deposition (CVD), 8,9 pulsed laser deposition (PLD), 10,11 atomic layer deposition (ALD), 12,13 sputtering, 14,15 and sol-gel. 16 Among them, CVD gains particularly concerns because it is a simple and economic technique that has been widely used in the semiconductor industry to produce thin lms.…”
Section: Introductionmentioning
confidence: 99%
“…The crystal quality of asgrown ZnO thin lms is superior to previously reported ZnO lms grown on (001) LiGaO 2 substrate [25][26][27] and comparable to that of ZnO thin lms grown by MBE, MOCVD, PLD and ALD. [4][5][6][7][10][11][12][13] The underlying growth mechanism towards the high-quality ZnO lms is also discussed in detail.…”
Section: Introductionmentioning
confidence: 99%