Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Li, Huijie; Zhao, Guijuan; Wang, Lianshan; Chen, Zhe; Yang, Shuting

doi:10.3390/nano6110195

Cited by 12 publications

(8 citation statements)

References 58 publications

(75 reference statements)

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“…[21] In the case of group III-nitrides, GaN and (Al,Ga)N NWs were demonstrated on flexible Ti and Ta metal foils, [5,6] while InN NWs were reported on brass foil substrates. [22] On Ta foils, GaN NW-based LEDs have also been recently demonstrated. [6] In a previous work we found that the structural and optical quality of self-assembled GaN NW ensembles grown on a Ti foil are comparable to those of similar structures grown on Si.…”

Section: Introductionmentioning

confidence: 99%

“…[5] For many applications, vertical NW ensembles are highly desirable or even required. However, for NWs grown on metal foils a broad distribution of tilt angles with respect to the substrate normal is commonly observed [6,17,22]. For the case of GaN NWs grown on foils of Ti and Ta, this phenomenon was attributed to an epitaxial relation between the NWs and the individual grains of the polycrystalline metal foil.…”

Section: Introductionmentioning

confidence: 99%

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Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

et al. 2017

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We report on plasma-assisted molecular beam epitaxial growth of almost randomly oriented, uniformly tilted, and vertically aligned self-assembled GaN nanowires (NWs), respectively, on different types of polycrystalline Ti foils. The NW orientation with respect to the substrate normal, which is affected by an in situ treatment of the foil surface before NW growth, depends on the crystallinity of the native oxide. Direct growth on the as-received foils results in the formation of ensembles of nearly randomly oriented NWs due to the strong roughening of the surface induced by chemical reactions between the impinging elements and Ti. Surface nitridation preceding the NW growth is found to reduce this roughening by transformation of the uppermost layers into TiN and TiO N species. These compounds are more stable against chemical reactions and facilitate the growth of uniformly oriented GaN NW ensembles on the surface of the individual grains of the polycrystalline Ti foils. If an amorphous oxide layer is present at the foil surface, vertically oriented NWs are obtained all across the substrate because this layer blocks the transfering of the epitaxial information from the underlying grains. The control of NW orientation and the understanding behind the achievement of vertically oriented NWs obtained in this study represent an important step towards the realization of GaN NW-based bendable devices on polycrystalline metal foils.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

et al. 2017

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“…The realization of light-emitting devices on metal thin films and metal substrates has been considered as a viable solution. Various metals, such as Mo, brass, TiN, Ta, and Ti foils, have been used for nucleating NWs for devices that emit in the UV and visible wavelength ranges [9][10][11][12][13]. Moreover, thin films of metal on silicon, or metal foils, have been regarded as less expensive alternatives to bulk metal substrates, especially in realizing a roll-to-roll fabrication process [5,12].…”

Section: Introductionmentioning

confidence: 99%

Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

Priante¹,

Janjua²,

Prabaswara³

et al. 2017

Opt. Mater. Express

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In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti preorienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm 2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm 2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.

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“…In this regard, III-nitride NWs grown on pre-orienting thin film metal layer have been demonstrated. [2,3] However, the high thermal mismatch between metals, e.g. Ti, and Si, causes delamination of the Ti thin-film from the Si substrate when devices are operated at elevated injection current density, thus causing device failure.…”

Section: Introductionmentioning

confidence: 99%