Morphology and stress at silicon-glass interface in anodic bonding

Tang, Jiali; Cheng, Cai; Ming, Xiaoxiang; Zhao, Shuangliang; Tu, Shan‐Tung; Liu, Honglai

doi:10.1016/j.apsusc.2016.06.076

Cited by 19 publications

(7 citation statements)

References 31 publications

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“…With the continuous migration of lithium ions, the width of the cation depletion layer is reached to the maximum, creating a tremendous electrostatic field force between depletion layer and Al foil. Therefore, close contact between PEO‐HBPUEs and Al foil is occurred accompanied by the microcreep and viscous flow, and then the elements are began to diffuse that facilitate the chemical reaction to form the bonding layer 39,40 …”

Section: Resultsmentioning

confidence: 99%

Synthesis and characterization of electrolyte substrate materials based on hyperbranched polyurethane elastomers for anodic bonding

Zhang

Wang

Zhao³

et al. 2021

J of Applied Polymer Sci

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A series of hyperbranched polyurethane elastomers (PEO‐HBPUEs) as polymer electrolyte substrate materials was developed for anodic bonding with aluminum (Al) foil in micro‐electro‐mechanical system (MEMS) devices. The PEO‐HBPUEs were prepared by pre‐polymerization method with toluene‐2,4‐diisocyanate(TDI), polypropylene glycol (PPG), 1,4‐butanediol(BDO), trimethylolpropane(TMP), lithium bis(trifluoromethanesulphonyl)imide (LiTFSI), and polyethylene oxide (PEO)‐based electrolyte in varying proportions via solution casting technique at room temperature. All prepared PEO‐HBPUEs exhibited low glass transition temperatures, good thermal stabilities, and suitable mechanical properties. The XRD results showed that PEO‐HBPUEs are amorphous, and LiTFSI was well dissolved in the polymer matrix. The component of PEO‐based electrolyte in PEO‐HBPUEs contributed to increase the ionic conductivity, of which the highest value reached 1.23 × 10−3 S/cm at 75°C for PEO‐HBPUE4. The anodic bonding of PEO‐HBPUE substrate with Al foil was conducted by the coupling action of electric field, temperature field, and pressure field. A clear intermediate bonding layer between the substrate and Al foil was observed and the elements diffusion around bonding layer can be detected by SEM, indicating PEO‐HBPUEs and Al foil have been jointed together successfully. The highest tensile strength of the bonding interface of PEO‐HBPUE4/Al reached 1.88 MPa. All results demonstrated that the prepared PEO‐HBPUEs materials would be promising substrates for flexible MEMS device that can be applied to flexible packaging by anodic bonding technology.

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Section: Resultsmentioning

confidence: 99%

Synthesis and characterization of electrolyte substrate materials based on hyperbranched polyurethane elastomers for anodic bonding

Zhang

Wang

Zhao³

et al. 2021

J of Applied Polymer Sci

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“…For anodic bonding wafer, residual stress caused by differences of thermal expansion coefficient of Si/glass has been sufficiently studied. Both experimental results and FEM simulation show that the stress concentrates on the bonding interface [ 26 ]. Charge transfer is also proven to be a stress implantation process due to Na gradient [ 27 ] and ions replaced [ 28 , 29 ].…”

Section: Resultsmentioning

confidence: 99%

Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

Zhan

et al. 2017

Materials

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In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

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“…The COMPASS III force field was used in the MD simulations. [61] Previous studies utilized the COMPASS force field in both c-Si [62][63][64][65][66] and crystalline silica [67][68][69] systems. The simulated density value of pristine c-Si systems (i.e., 2.331 g cm À3 at 25 °C) and the lattice constants of an 8 Â 8 Â 8 supercell of a Si unit cell (i.e., 43.433 Å at 25 °C) closely match the experimental values (i.e., 2.329 g cm À3 and 43.446 Å for 8 Si unit cells).…”

Section: Methodsmentioning

confidence: 99%

Dynamics of Plasma‐Assisted Epitaxial Silicon Growth Driven by a Hydrogen‐Incorporated Nanostructure for Novel Applications

Oh,

Lee,

Kim

et al. 2023

Small Structures

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Plasma‐assisted epitaxially grown silicon (plasma‐epi Si) is a new silicon‐based material with a tailorable nanostructure. Nanovoids can be introduced into plasma‐epi Si during growth, enabling the bottom‐up fabrication of porous Si for applications such as batteries, hydrogen storage, and even explosives. To fully control the nanostructure of plasma‐epi Si, its growth dynamics must be studied. In this study, the correlation between hydrogen incorporation and defect nanostructures in plasma‐epi Si grown under various process conditions is investigated, and the experimental results are supported by molecular dynamics simulations. The nanostructural evolution during growth suggests a model in which plasma‐epi Si shows two growth stages distinguished by different dominant defect nanostructures. In the initial growth stage, the nanostructure can be controlled by the deposition conditions, whereas the nanostructure is dominated by interconnected voids, forming a porous structure. In the subsequent bulk growth stage, the material growth is less sensitive to the deposition conditions, whereas the nanostructure becomes prevalent isolated defects. In the results of this study, different strategies for the plasma‐epi Si growth process for different applications are suggested. In these results, a better understanding of this new material may be provided and the discovery of various applications for bottom‐up‐grown porous Si is facilitated.

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Morphology and stress at silicon-glass interface in anodic bonding

Cited by 19 publications

References 31 publications

Synthesis and characterization of electrolyte substrate materials based on hyperbranched polyurethane elastomers for anodic bonding

Synthesis and characterization of electrolyte substrate materials based on hyperbranched polyurethane elastomers for anodic bonding

Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

Dynamics of Plasma‐Assisted Epitaxial Silicon Growth Driven by a Hydrogen‐Incorporated Nanostructure for Novel Applications

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