“…The semiconductors of group V–VI, exhibiting narrow band gaps, such as Bi 2 Te 3 -, Bi 2 Se 3 -, and Sb 2 Te 3 -based alloys, are widely used for TE devices with high ZT value within the temperature range of 200 to 400 K [ 18 , 25 , 26 , 27 , 28 , 29 , 30 ]. Bi 2 Te 3 , Bi 2 Se 3 , Sb 2 Te 3 , and their alloys crystallize in a rhombohedral structure belonging to the tetradymite space group , as shown in Figure 1 a [ 31 , 32 , 33 ].…”