2017
DOI: 10.1002/crat.201700183
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Morphology and Electric Properties of Tin Oxide Composite Thin Films Prepared by Sol‐Gel Method

Abstract: Undoped and Cu doped SnO 2 thin films were fabricated by sol-gel method. The influence of annealing temperature, Cu doping and the addition of polyethyleneglycol (PEG)/glycerine on the film crystallinity, morphology and electrical properties were investigated. It is shown that annealing temperature can affect the film crystallization by controlling the crystallinity of the film and adhesion between the substrate and the films. Besides, both the Cu doping and PEG/glycerine addition can reduce the cracks quantit… Show more

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Cited by 9 publications
(2 citation statements)
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References 30 publications
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“…In its stoichiometric form, it is a good dielectric. However, violation of stoichiometry, for example, the presence of an oxygen vacancy, makes it a conducting material with n-type conductivity [17]. SnO 2 has a band gap in the range 3.6-3.8 eV.…”
Section: Introductionmentioning
confidence: 99%
“…In its stoichiometric form, it is a good dielectric. However, violation of stoichiometry, for example, the presence of an oxygen vacancy, makes it a conducting material with n-type conductivity [17]. SnO 2 has a band gap in the range 3.6-3.8 eV.…”
Section: Introductionmentioning
confidence: 99%
“…Tin dioxide is an n-type wide-gap semiconductor with the band gap from 3.6 to 4 eV [8,9] and a transparency more than 85% [10]. SnO 2 films were obtained by such methods as molecular-beam epitaxy (MBE) [11,12], pulsed laser deposition [13,14], electron-beam evaporation [15], sputtering [16] and the sol-gel process [17]. In most contributions, SnO 2 films are polycrystalline.…”
Section: Introductionmentioning
confidence: 99%