Abstract:Morphology and crystal-quality of InAs/In0.53Ga0.47As/InP quantum dots (QDs) grown by
metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have
been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the
growth modes. After optimizing the dots’ growth modes, dots’ size dispersion and crystal-quality
are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence
(PL) peak-intensity from single QD. When the d… Show more
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