Morphological transformation and kinetic analysis in the aluminum-mediated a-Si:H crystallization

High-Quality Nanocrystalline Silicon (nc-Si:H) Thin Film With Mixed-Phase and Its Application of Circulating Tumor Cell DEP Biochip

“…The annealing temperature was 200 °C, the power was 400W, and the annealing was held for 40 minutes. The formation of nanocrystalline-size grains increases with the annealing time [34]. Fig.…”

a-Si:H crystallization from isothermal annealing and its dependence on the substrate used

“…The 3-dimensional images ranges an area of 50 m × 50 m of the samples. In this case the grain formation is observed and the effect of the annealing process on the surface morphology is therefore observed by the formation of micrometric size grains, which increase with the annealing time [9]. This state of silicon is known as microcrystalline silicon (c-Si:H).…”

“…3, where the Si-Si vibration mode of the microcrystalline phase in the FTIR spectra (450-550 cm −1 ) was identified. The frequency shift is associated to the crystallized fraction determined in reference [9], using the Avrami equation…”

“…In these grains the internal structure changes from the amorphous to crystalline structure resulting in a metal-induced phase transition. This transformation has been investigated using aluminum among other metals [7][8][9][10]. In this work we have studied the effect of the substrate used to grow the films, particularly glass or c-Si, on the morphological and vibrational properties of a-Si:H films processed by MIC.…”

Science than art of Si many-body potentials: Reproducibility and transferability

“…-Many-body empirical potentials have been developed for the last three decades, and with the advance of supercomputers, these potentials are expected to be even more useful for the next three decades [1]. Atomistic calculations using empirical potentials can be of particular use in understanding the structural aspects of Si or Si-H systems that are found in many technologically important areas such as optical devices [2], nano-electromechanical systems (NEMS) and their building blocks [3], the surface chemistry of Si [4,5], superconductivity of silane under high pressure [6], and α-Si:H materials used in energy applications [7]. There have been some efforts on the development of empirical potentials for Si [8][9][10][11] and for Si-H [12][13][14] to name a few, but none of them was entirely successful in predicting the bulk elastic properties of crystalline Si.…”