Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

Enhanced photoluminescence of nonpolar p-type ZnO film by surface plasmon resonance and electron transfer

“…In order to construct nonpolar ZnO-based light-emitting devices, the preparation of high-quality nonpolar p-type ZnO thin films is indispensable. Fortunately, it seems to be more promising to obtain nonpolar p-type ZnO thin films because the nonpolar films exhibit some advantages over polar films to obtain p-type behavior [9][10][11][12]. So far, there have been only a few studies dealing with p-type doping of nonpolar ZnO [13][14][15][16][17][18].…”

Growth and structural characterization of intrinsic, acceptor, and donor doped (Mg,Zn)O epilayers via metalorganic vapor phase epitaxy on (1 0 1¯ 0) ZnO substrates

“…In addition to high surface energies on polar planes [24], the variation of adatom mobility and diffusion with different crystallographic directions [25] may facilitate the preference of Volmer-Weber growth mode on the c-plane. Pierce et al [14] and others [16,26] have shown monocrystalline deposition of ZnO on non-polar substrates and indicate the feasibility of step-flow growth on non-polar orientations. The utility of non-polar orientations have been favored for use in optoelectronic devices due to the reduction of internal electric fields, which lead to the quantum confined Stark effect (QCSE) and compromise quantum efficacies with increasing injected carrier density.…”

Growth and characterization of Mg Zn1−O films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

“…In case of optoelectronic devices, as well known, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency [6,7]. Recently, nonpolar ZnO films without a polarity along the growth direction have been studied to avoid such a polarization effect [8][9][10][11][12].…”