Morphological Properties of Nanocrystalline Silicon from p‐Type Bulk Silicon

Abstract

In this paper, the topography properties as layer thickness, porosity, and shape are studied for porous silicon prepared by using electro-chemical etching method from p-type bulk silicon like one side mirror with hydrofluoric acid (39%-43%) and ethanol (99.9%) (2:1), the etching time is (2, 4, 6, 8, and 10) min, with potential (6 V DC), the porosity and layer thickness can determine by using gravimetric method and SEM image to study the comparison between the image for different etching time.