Morphological, optical and electrical properties of CdZnO films prepared by sol–gel method

Abstract

CdZnO films were deposited by the sol–gel spin coating method onto glass substrates. ZnO, Cd(0.25)Zn(0.75)O, Cd(0.50)Zn(0.50)O, Cd(0.75)Zn(0.25)O, CdO films were deposited using different rates of cadmium acetate dehydrate and zinc acetate dehydrate solutions. These values in parentheses refer to the ratio in solution. The dried and annealing temperatures were selected to be 300 °C and 500 °C in air, respectively. The XRD patterns show polycrystalline nature. It was observed that the crystal structure changes from wurtzite (ZnO) to cubic (CdO) depending on the Zn and Cd proportions in the CdZnO structure. The optical properties of these films have been investigated by means of the optical transmittance measurement. The absorption band edges of films shift from 3.26 to 2.31 eV. The morphological characterizations of the films have been performed by SEM and AFM. In particular, the clusters formed from the nanostructured particles were shown in the SEM image of the Cd(0.75)Zn(0.25)O film. The electrical measurements show that the CdZnO films have semiconducting behaviour and are very sensitive to light.

Growth of Zn1−x CdxO nanocrystalline thin films by sol-gel method and their characterization for optoelectronic applications

“…This confirms that the Cd doped ZnO thin films have significant light sensitive properties. Similar properties were reported by the Y. Caglar et al [19]. The electrical resistivity (ρ) of ZnO and Cd doped ZnO thin films have been measured in the temperature range of 300 to 500 K. The plots lnρ versus 1/T of ZnO and Cd doped ZnO thin films are shown in Fig.…”

“…4 we have concluded two interesting things. Firstly, the pure ZnO fundamental absorption peak is observed at 372 nm i.e in UV region and as the doping concentration increases the peak is shifted towards higher wavelengths that is into a visible region, as reported by Y. Caglar et al [19]. Secondly, the band gap decreases on increasing the Cd concentrations.…”

Down-top nanofabrication of binary (CdO)_x&nbsp;<br />(ZnO)_1-x&nbsp;nanoparticles and their antibacterial activity

“…At a Fermi level distance, which is extremely remote from the particle center, the nuclear potential for the conduction of electrons is very low and therefore any transition with permitted quantum numbers will possess an absorption energy equal to the conduction band energy. 95 For comparison, the band gap values were decreased with increasing x values, as depicted in Table 3. It is considered that the increase in x value may result in an increase of defected states leading to an absorption coefficient increment.…”

Composition optimization of ZnO-based photocatalyst arrays by scanning electrochemical microscopy and the characterization of efficient photocatalysts

“…Similarly to a TiO 2 photocatalyst, ZnO is also an ntype semiconductor with a wide band gap (~3.37 eV) and a large exciton binding energy (60 meV). Some studies have shown that the photoactivity of ZnO for the degradation of dyes is even better than that of TiO 2 [2,3,20]. Zinc oxide is a commercially available material that is relatively cheap, chemically stable and has low toxicity.…”